advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -80v simple drive requirement r ds(on) 15m fast switching characteristic i d -95a halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg o c t j o c symbol value units rthj-c maximum thermal resistance, junction-case 0.5 o c/w rthj-a 62 o c/w data and specifications subject to change without notice 201107181 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v 1 operating junction temperature range storage temperature range -55 to 150 thermal data parameter pulsed drain current 1 -300 -55 to 150 250 total power dissipation maximum thermal resistance, junction-ambient AP9581GP-HF rating -80 + 20 -95 halogen-free product -60 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-220 package is widely preferred for commercial-industrial powe r applications and suited for low voltage applications such as dc/dc converters. g d s to-220(p)
AP9581GP-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -80 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 15 m ? v gs =-4.5v, i d =-20a - - 20 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 60 - s i dss drain-source leakage current v ds =-64v, v gs =0v - - -25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-30a - 72 115 nc q gs gate-source charge v ds =-64v - 11 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 45 - nc t d(on) turn-on delay time v ds =-40v - 13 - ns t r rise time i d =-30a - 60 - ns t d(off) turn-off delay time r g =3.3 - 135 - ns t f fall time v gs =-10v - 165 - ns c iss input capacitance v gs =0v - 6200 9920 pf c oss output capacitance v ds =-25v - 900 - pf c rss reverse transfer capacitance f=1.0mhz - 390 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-30a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-10a, v gs =0v, - 60 - ns q rr reverse recovery charge di/dt=-100a/s - 125 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ( p)
AP9581GP-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 10 12 14 16 18 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 o c 0 50 100 150 200 250 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -7.0v -6.0v v g = - 5.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 40 80 120 160 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -7.0v -6.0v v g = -5.0v
AP9581GP-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain current fig 12. gate charge waveform v.s. case temperature 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0 40 80 120 160 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -64v i d = -30a 0 2000 4000 6000 8000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a)
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