http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente STT4443 -2.3a , -30v , r ds(on) 120 m ?? p-channel enhancement mode mosfet 02-dec-2011 rev. b page 1 of 4 4443 ???? ? top view rohs compliant product a suffix of ?-c? specifies halogen and lead-free description STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes s device. the tsop-6 package is universally used for all commercial-industrial applications. features ? simple drive requirement ? smaller outline package ? surface mount package marking package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a =25c -2.3 continuous drain current 3 t a =70c i d -1.8 a pulsed drain current 1 i dm -10 a power dissipation t a =25c p d 1.14 w linear derating factor 0.01 w / c operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ? ja 110 c / w millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 date code
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente STT4443 -2.3a , -30v , r ds(on) 120 m ?? p-channel enhancement mode mosfet 02-dec-2011 rev. b page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250ua gate-threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250ua gate-body leakage current i gss - - 100 na v gs = 20v - - -1 v ds = -30v, v gs =0 drain-source leakage current i dss - - -25 a v ds = -24v, v gs =0 - - 120 v gs = -10v, i d = -2a drain-source on-resistance 2 r ds(on) - - 170 m ? v gs = -4.5v, i d = -1a forward transconductance g fs - 4 - s v ds = -5v, i d = -2a dynamic total gate charge 2 q g - 3 - gate-source charge q gs - 0.78 - gate-drain charge q gd - 1.6 - nc v ds = -25v, v gs = -4.5v, i d = -2a turn-on delay time 2 t d(on) - 7 - rise time t r - 6 - turn-off delay time t d(off) - 15 - fall time t f - 7.5 - ns v ds = -15v, v gs = -5v, r g =3.3 ? , r d =15 ? , i d = -1a input capacitance c iss - 260 - output capacitance c oss - 55 - reverse transfer capacitance c rss - 44 - pf v gs =0, v ds = -25v, f=1.0mhz reverse transfer capacitance rg - 4.3 5 ? f=1.0mhz source-drain diode diode forward voltage 2 v sd - - -1.2 v i s = -0.9a, v gs =0 reverse recovery time 2 t rr - 15 - ns reverse recovery charge q rr - 7 - nc i s = -2a, v gs =0 di/dt=100a/ s notes: 1. pulse width limited by max. junction temperature. 2. pulse test 3. surface mounted on 1 in 2 copper pad of fr4 board, t Q 5sec; 180c/w when mounted on min. copper pad.
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente STT4443 -2.3a , -30v , r ds(on) 120 m ?? p-channel enhancement mode mosfet 02-dec-2011 rev. b page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente STT4443 -2.3a , -30v , r ds(on) 120 m ?? p-channel enhancement mode mosfet 02-dec-2011 rev. b page 4 of 4 characteristic curves
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