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december 2010 doc id 17690 rev 3 1/16 16 stgd3hf60hd 4.5 a, 600 v very fast igbt with ultrafast diode features minimal tail current low conduction and switching losses ultrafast soft recove ry antiparallel diode applications motor drive description the stgd3hf60hd is based on a new advanced planar technology concept to yield an igbt with more stable switching performance (e off) versus temperature, as well as lower conduction losses. figure 1. internal schematic diagram 1 3 dpak tab table 1. device summary order codes marking package packaging STGD3HF60HDT4 gd3hf60hd dpak tape and reel www.st.com
contents stgd3hf60hd 2/16 doc id 17690 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
stgd3hf60hd electrical ratings doc id 17690 rev 3 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 7.5 a i c (1) continuous collector current at t c = 100 c 4.5 a i cl (2) 2. vclamp = 80%,(v ces ), tj =150c, r g = 10 , v ge = 15 v. turn-off latching current 18 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa. pulsed collector current 18 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 10 a i fsm surge non repetitive forward current t p =10ms sinusoidal 25 a p tot total dissipation at t c = 25 c 38 w t j operating junction temperature - 55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case igbt 3.3 c/w thermal resistance junction-case diode 5 c/w r thj-amb thermal resistance j unction-ambient 100 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
electrical characteristics stgd3hf60hd 4/16 doc id 17690 rev 3 2 electrical characteristics (t j =25 c unless otherwise specified). table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 0.5 a, t j =125c v ge = 15 v, i c = 1.5 a v ge = 15 v, i c = 1.5 a, t j =125c 1.4 2.45 1.85 2.95 v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j = 125 c 250 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 1.5 a 1.5 s table 5. dynamic electrical characteristics symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 152 14 3 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c = 1.5 a, v ge = 15 v (see figure 18 ) - 12 2 6 - nc nc nc
stgd3hf60hd electrical characteristics doc id 17690 rev 3 5/16 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 1.5 a r g = 100 , v ge = 15 v (see figure 19 ) - 11 4 285 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 1.5 a r g = 100 , v ge = 15 v, t j =125 c (see figure 19 ) - 10 5 265 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 1.5 a, r ge = 100 , v ge = 15 v (see figure 19 ) - 26 60 50 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 1.5 a, r ge = 100 , v ge =15 v, t j = 125 c (see figure 19 ) - 64 69 71 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in (see figure 20) . if the igbt is offered in a package with a co-pak diode, the co- pack diode is used as exte rnal diode. igbts and diode are at the same temperature (25c and 125c). 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 1.5 a r g = 100 , v ge =15 v (see figure 19 ) - 19 12 31 - j j j e on (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 1.5 a r g = 100 , v ge = 15 v, t j = 125 c (see figure 19 ) - 38 35 73 - j j j table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 1.5 a i f = 1.5 a, t j =125 c - 1.4 1.15 1.8 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 1.5 a, v r = 40 v, di/dt = 100 a/ s (see figure 20 ) - 85 124 3 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 1.5 a,v r = 40 v, t j =125 c, di/dt = 100 a/ s (see figure 20 ) - 114 194 3.5 ns nc a
electrical characteristics stgd3hf60hd 6/16 doc id 17690 rev 3 2.1 electrical characterist ics (curves) figure 2. output characteristics figure 3. output characteristic details figure 4. transfer characteristics figure 5. collector-emitter on voltage vs collector current figure 6. collector-emitter on voltage vs temperature figure 7. breakdown voltage vs temperature i c 6 4 2 0 0 4 v ce (v) 8 (a) 2 6 8 10 8 v 6v 7v v ge =15v 12 14 16 9v 10v 11v 12v 1 3 v am0 8 674v1 i c 1.5 1.0 0.5 0 0 2 v ce (v) 4 (a) 1 3 2.0 2.5 8 v 6v 7v v ge =15v 3 .0 3 .5 4.0 9v am0 8 675v1 i c 6 4 2 0 0 4 v ge (v) 8 (a) 2 6 10 8 10 12 12 14 16 v ce =10v am0 8 676v1 v ce( sa t) 2.5 2.0 1.5 1.0 0.5 1.5 i c (a) (v) 1.0 2.0 3 .0 t j =25c t j =125c t j =-50c 3 .5 3 .0 2.5 v ge =15v am0 8 677v1 v ce( sa t) 2.5 2.0 1.5 1.0 -50 50 t j (c) (v) 0 100 3 .0 i c =1.5a i c =0.75a i c = 3 a 3 .5 v ge =15v am0 8 67 8 v1 v ce s -50 0 t j (c) (v) 50 100 600 640 6 8 0 720 i c =1ma am0 8 679v1
stgd3hf60hd electrical characteristics doc id 17690 rev 3 7/16 figure 8. gate threshold voltage vs temperature figure 9. gate charge vs gate-emitter voltage figure 10. capacitance variations figure 11. switching losses vs collector current figure 12. switching losses vs gate resistence figure 13. switching losses vs temperature v ge(th) 5.0 4.5 4.0 3 .5 -50 0 t j (c) (v) 50 100 v ge =v ce i c =250 a am0 883 0v1 v ge 15 10 5 0 0 4 q g (nc) (v) 8 12 v cc =4 8 0v i c =1.5a am0 883 1v1 c 150 100 50 0 0 20 v ce (v) (pf) 10 200 3 0 cie s coe s cre s 40 250 3 00 f=1mhz v ge =0 am0 883 2v1 e 10 0.5 1.5 i c (a) ( j) 1.0 2.0 20 e on e off 2.5 v ce =400v, r g =100 v ge =15v, t j =125c 3 0 40 50 60 70 am0 888 9v1 e 3 0 0 400 r g ( ) ( j) 200 600 3 5 e on e off 8 00 v ce =400v, i c =1.5a v ge =15v, t j =125c 40 45 50 55 60 am0 88 90v1 e 10 25 75 t j (c) ( j) 50 100 e on e off v ce =400v, i c =1.5a v ge =15v, r g =100 15 20 25 3 0 3 5 am0 88 91v1
electrical characteristics stgd3hf60hd 8/16 doc id 17690 rev 3 figure 14. turn-off soa figure 15. diode forward on voltage figure 16. thermal impedance i c 10 1 1 100 v ce (v) 10 (a) 0 v ge =15v r g =100 t j =25c t j =150c am0 883 6v1 (a) 2 0 0.5 1 v 0 1.5 4 6 2 t c =25c 8 10 t c =125c 2.5 12 14 fm (v) i fm 3 3 .5 16 1 8 20 22 24 t c =-50c am04940v1
stgd3hf60hd test circuits doc id 17690 rev 3 9/16 3 test circuits figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform figure 20. diode recovery time waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data stgd3hf60hd 10/16 doc id 17690 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
stgd3hf60hd package mechanical data doc id 17690 rev 3 11/16 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data stgd3hf60hd 12/16 doc id 17690 rev 3 figure 21. dpak (to-252) drawing 006 8 772_g
stgd3hf60hd packaging mechanical data doc id 17690 rev 3 13/16 5 packaging mechanical data figure 22. dpak footprint (a) table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a. all dimension ar e in millimeters 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
packaging mechanical data stgd3hf60hd 14/16 doc id 17690 rev 3 figure 23. tape for dpak (to-252) figure 24. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stgd3hf60hd revision history doc id 17690 rev 3 15/16 6 revision history table 11. document revision history date revision changes 29-jun-2010 1 first release. 09-sep-2010 2 some values changed in ta bl e 2 . 22-dec-2010 3 document status promoted from preliminary data to datasheet.
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