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| savantic semiconductor product specification silicon pnp power transistors 2n5613 2n5615 2N5617 2n5619 description with to-3 package excellent safe operating area low collector saturation voltage applications for general-purpose amplifier ; and switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n5613 -80 2n5615/5617 -100 v cbo collector-base voltage 2n5619 open emitter -120 v 2n5613 -60 2n5615/5617 -80 v ceo collector-emitter voltage 2n5619 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a p d total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.5 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2n5613 2n5615 2N5617 2n5619 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n5613 -60 2n5615/5617 -80 v ceo(sus) collector-emitter sustaining voltage 2n5619 i c =-50ma ;i b =0 -100 v v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.5 v v be base-emitter on voltage i c =-2.5a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ceo collector cut-off current v ce = rated v ceo ,i b =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma 2n5613/5617 70 200 h fe dc current gain 2n5615/5619 i c =-2.5a ; v ce =-5v 30 90 2n5613/5617 70 f t transition frequency 2n5615/5619 i c =-0.5a ; v ce =-10v 60 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2n5613 2n5615 2N5617 2n5619 package outline fig.2 outline dimensions |
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