s mhop microelectronics c orp. a STS8216 symbolv ds v gs i dm 100 w a p d c 1.25 -55 to 150 i d units parameter 20 6 24 c/w vv 10 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 6a 27 @ vgs=2.5v 20 @ vgs=4.0v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw sep,11,2009 1 details are subject to change without notice. a t a =25 c esd protected. t a =70 c 4.8 a t a =70 c 0.8 w dual n-channel enhancement mode field effect transistor green product sot 26 top view s1 d1/d2 s2 g1 d1/d2 g2 1 2 3 6 54 g 1 d 1 s 1 g 2 d 2 s 2
symbol min typ max units bv dss 20 v 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4.0v , i d =6a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =16v , v gs =0v v gs = 10v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics STS8216 ver 1.0 0.8 1.5 g fs 23 s v sd c iss 470 pf c oss 164 pf c rss 142 pf q g 17 nc 54 nc q gs 63 nc q gd 45 t d(on) 10 ns t r 2.1 ns t d(off) 4.5 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =10v i d =1a v gs =4.0v r gen =10 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =6a input capacitance output capacitance dynamic characteristics forward transconductance diode forward voltage reverse transfer capacitance v gs =2.5v , i d =5.2a m ohm c f=1.0mhz c v ds =10v,i d =6a, v gs =4.0v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.0a 0.79 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw sep,11,2009 2 _ i s maximum continuous drain-source diode forward current 2.0 a b 17 20 20 27
STS8216 ver 1.0 www.samhop.com.tw sep,11,2009 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 30 24 18 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 2 v v g s = 1 . 5 v v g s = 4 v v g s = 2 . 5 v 15 12 9 6 3 0 0 0.4 2.4 2.0 1.6 1.2 0.8 tj=125 c 25 c 36 30 24 18 12 6 1 1 6 12 18 24 30 v g s =2.5v v g s =4v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =4v i d = 6a v g s =2.5v i d =5.2 a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 1.20 125 150 100 75 50 25 0 -25 -50 i d =250ua
STS8216 ver 1.0 www.samhop.com.tw sep,11,2009 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage crss coss ciss c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 6050 40 3020 10 0 2 2.5 3 3.5 0 gate-source voltage variation with source current 900750 600 450 300 150 0 0 4 3 21 0 0 2 4 6 8 10 12 14 16 v ds = 10v i d =6 a 125 c 25 c 75 c 2 4 6 8 10 12 60 10 1 0.1 0.1 1 10 30 50 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 1 10 100 100 10 1 1000 vds=10v,id=1a vgs=4v td(on) tr td(off) tf 25 c 125 c 75 c r ds (o n ) l im i t v g s =4v s ingle p uls e t a =25 c 1 0 0 us dc 10 0ms 1ms 1 0ms 6 60 4 i d =6 a
a STS8216 ver 1.0 www.samhop.com.tw sep,11,2009 5 figure 13. switching test circuit figure 14. switching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width inverted v dd r d v v r s v g gs in gen out l 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance
STS8216 ver 1.0 www.samhop.com.tw sep,11,2009 6 package outline dimensions sot 26 detail a c r1 r l2 l l1 detail a gauge plane seating plane a a1 a2 d b 6 5 4 1 2 3 e1 e e1
STS8216 ver 1.0 www.samhop.com.tw sep,11,2009 7 sot 26 tape and reel data sot 26 carrier tape sot 26 reel sot 26 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + 1.00 +0.10 0.00 1.50 +0.10 0.00 1.75 0.10 + 3.50 0.05 + 8.0 + 0.30 a b b 0.25 + 0.05 r0 . 3 5 m ax r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 max r0.3 r0. 3 section b-b 178.0 + 0.5 60 + 0.5 9.0 1.50 +1.5 -0 2.2 + 0.5 10.6 13.5 + 0.5 scale 2:1
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