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| geometry process details principal device types cmpz5221b thru cmpz5267b gross die per 5 inch wafer 101,184 process CPZ28 zener diode 0.5 watt zener diode chip process epitaxial planar die size 13 x 13 mils die thickness 7.8 mils anode bonding pad area 7.0 x 7.0 mils top side metalization ti/al - 13,000? back side metalization au-as - 13,000? backside cathode r0 www.centralsemi.com r2 (22-march 2010) http://
process CPZ28 typical electrical characteristics www.centralsemi.com r2 (22-march 2010) http:// |
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