201009215-3 adva nced power electronics corp. 1/5 AP4800GYT-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data g d s bv 30v simple drive requirement good thermal performance rohs-compliant , halogen-free i 13 a o rdering information AP4800GYT-HF-3 tr rohs-compliant halogen-free pmpak ? 3x3, shipped on tape and reel (3000pcs/reel) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the pmpak ? 3x3 package is special ly designed for dc-dc converter applications, with a small foot print that offers a backside heat sink and a low package profile. s s s g pmpak ? 3x3 low on-resistance r 13 m w pmpak ? is a registered trademark of advanced power electronics corp. d d d d symbol units v ds v v gs i d at t a =2 5 c i d at t a =7 0 c i dm a p d at t a =2 5 c t stg t j symbol value units rthj- c maximum thermal resistance, junction- case 3 4.5 c /w gate-source voltage 2 5 v continuous drain curren t 3 1 3 a parameter rating drain-source voltage 30 total power dissipation parameter storage temperature range operating junction temperature range 3.5 7 w 10.4 a pulsed drain current 1 40 continuous drain current 3 -55 to 150 c -55 to 150 c rthj-a maximum thermal resistance, junction-ambient 3 35 c /w
adva nced power electronics corp. 2/5 AP4800GYT-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. notes: 1.pulse width limited by maximum junction temperature 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 85c at steady state. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - 10 13 mw v gs =4.5v, i d =8a - 18.4 26 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =15v, i d =10a - 26 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge 2 i d =10a - 9.5 15 nc q gs gate-source charge v ds =15v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5.5 - nc t d(on) turn-on delay time 2 v ds =15v - 9 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =6w , v gs =10v - 23 - ns t f fall time -8- ns c iss input capacitance v gs =0v - 700 1120 pf c oss output capacitance v ds =15v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.8 3.6 w source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.9a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =2.9a, v gs =0v - 19 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc ds gs v =30v, v =0v, tj=55c - - 25 ua
adva nced power electronics corp. 3/5 AP4800GYT-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 20 40 60 80 02468 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t a =25 o c 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 8 12 16 20 24 28 24681 0 v gs , gate-to-source voltage (v) r ds(on) (m w ) i d =8a t a =25c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
adva nced power electronics corp. 4/5 AP4800GYT-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% 0 2 4 6 8 10 0481 21 62 0 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =15v 0 200 400 600 800 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =85c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
adva nced power electronics corp. 5/5 AP4800GYT-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: pmpak ? 3x3 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: product: ap4800 gyt = rohs-compliant halogen-free pmpak ? 3x3 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence 4800gyt ywwsss symbols millimeters min nom max a 2.95 3.00 3.05 b 2.35 2.40 2.45 e b2 0.30 0.35 0.40 c 2.95 3.00 3.05 c1 0.37 0.42 0.47 c2 1.65 1.70 1.75 c3 0.37 0.42 0.47 d 0.80 0.85 0.95 d1 0.00 - 0.05 e 0.178 0.203 0.228 0.65 (ref.) b2 e c 3 c 2 c 1 b a c e d1 d
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