radar pulsed power transistor, loow, 2ms pulse, 20% duty 1.2 - 1.4 ghz ph1214-iooel features _-_-. - - npn silicon microwave power transisror common base configuration broadband class c operation high effkiency interdigitated geometry diffused emitter ballasting resistors gold metalization system internal input impedance matching hermetic metal/ceramic package absolute maximum ratings at 25c parameter symbol rating units i l-j e*,t:le collector-emittervoltage emitter-base voltage collector current (peak) total power dissipation junctiontemperature v ces 75 v v ebo 3.0 v .cw [g.ic:i.dg! !0.331 7 ?c 14.1 a p tot 214 w .i22 cxx~.~:o fc.25) tj 200 ?c i ~ ~~~~ storagetemperature i tstg 1 -65 to +200 ) ?c ) electrical characteristics at 25c parameter symbol min max units test conditions collector-emitter breakdown voltage bv,,, 75 - v i,=50 ma collector-emitter leakage current ices 10 ma v,,=28 v thermal resistance r . .^, - 0.7 ?c/w v-,=28 v, p,.,=25 w, 1==1.20, 1.30, 1.40 ghz output power power gain collector efficiency lnout return loss p out gp ?ic rl 100 - w v,,=28 v, p,,=25 w, f=1.20, 1.30, 1.40 ghz 6.0 - db v,,=28 v, p,,=25 w, f=1.20, 1.30,1.40 ghz 52 - % v,,=28 v, p,,=25 w. f=l.20,1.30. 1.40 ghz 8 - db v-,=28 v, p,.,=25 w, f=1.20, 1.30, 1.40 ghz overdrive stability od-s - +l.o db v,,=28 v, p,,=25 w, f=1.20, 1.30.1.40 ghz load mismatch tolerance vswr-t - 3:l - i/,,=28 v, p,,=25 w. f=l.20, 1.30.1.40 ghz load mismatch stablility vswr-s - 1.5:l - v,,=28 v, p,,=25 w, f=1.20, 1.30, 1.40 ghz broadband test fixture impedances test fixture test fixture :nplit 3? ?tput v f(ghz) z,,w z,,m circuit 1 -1 - i? circuit 3.0 - j2.7 5 - 1.20 2.6 - j3.8 1.30 3.0 - j3.4 2.4 - j2.6 502 zif 2s; 5082 1.40 3.4 - j3.1 1.9 - j2.5 - - - - specifications subject to change without notice. g-140 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 mia-com, inc. n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
radar pulsed power transistor. 1 oow phi21 4-l ooel -~~ v2.01 rf test fixture bpn4np jacks 2 places f 7 grcl!ne ?:ns 4 2laces --i ?r: wprcs ?jgers 5010.5 c4p4citsrs, yeatsink, transistor ?ransistz? 73csc255-ih noryl brpss 73050255-04 74250125-11 73050257-e circuit ii i m e n s i c! n s specifications subject to change without notice. m/a-com, inc. 9-141 north america: tel. (800) 366-2266 h asia/pacific: tel. +81 (03) 3226-1671 m europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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