q?v~zy??q?v?_ra]q{??qcabeq HTS10A80AS HTS10A80AS 3 quadrants 10a triac v drm = 1000 v i t(rms) = 10 a i tsm = 105 a i gt = 35 ma absolute maximum ratings (t j =25 e unless otherwise specified ) symbol parameter conditions ratings unit v drm repetitive peak off-state voltage sine wave, 50/60hz, gate open 1000 v v rrm repetitive peak reverse voltage 1000 v v dsm non-repetitive surge peak off-state voltage 1100 v v rsm non-repetitive peak reverse voltage 1100 v i t(rms) r.m.s. on-state current ? cycle, t c = 84 o c10a i tsm non-repetitive surge peak on-stat e current ? cycle, 50hz/60hz 100/105 a i 2 t fusing current t = 10ms 55 a 2 s p gm forward peak gate power dissipation t j = 125 c 16 w p g(av) forward average gate power dissipation t j = 125 c 0.1 w i gm peak gate current tp=20us, t j = 125 c 2a t j operating junction temperature -40~+125 o c t stg storage temperature -40~+150 o c t2 t1 g to-220f features ? repetitive peak off-state voltage : 1000v ? r.m.s on?state current (i t(rms) = 10a) ? gate trigger current : 35ma ? dv/dt ? 1500v/us general description the HTS10A80AS suitable for general purpose ac switching. it can be used as an on/off function in applications such as static relays, heating regulation, induction motor starting ciruits or for phase control operation in light dimmers, motor speed controllers. the snubberless versions are specially recommended for use on inductive loads, thanks to their high commutation performances. symbol
q?v~zy??q?v?_ra]q{??qcabeq HTS10A80AS thermal characteristics electrical characteristics (t j =25 e unless otherwise specified ) symbol parameter conditions min typ max unit i drm repetitive peak off-state current v d = v drm t j =25 o c- - 10ua t j =125 o c- - 1.5ma i rrm repetitive peak reverse current v r = v rrm t j =25 o c- - 10ua t j =125 o c- - 1.5ma i gt gate trigger current v d = 12v, r l =33 ? 1+ - - 20 ma 1-, 3- - - 35 ma v gt gate trigger voltage v d = 12v, r l =33 ? 1+, 1-, 3- - - 1.4 v v gd non-trigger gate voltage v d = 2/3v drm , r l =3.3k ? , t j =125 o c 0.2 - - v i l latching current i g = 1.2i gt 1+, 3- - - 70 ma 1- - - 80 ma i h holding current i t = 100ma - - 50 ma v tm peak on-state voltage i t = 14a, tp = 380us - - 1.55 v dv/dt critical rate of rise of off-state voltage v d = 2/3 v drm , gate open, t j =125 o c 1500 - - v/us symbol parameter conditions min typ max unit r jc thermal resistance junction to case 3.5 o c/w
q?v~zy??q?v?_ra]q{??qcabeq HTS10A80AS typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. surge on state characteristics fig 4. surge on state current rating fig 5. gate trigger current vs. junction temperature fig 6. holding and latching current vs. junction temperature
q?v~zy??q?v?_ra]q{??qcabeq HTS10A80AS package dimension 0.70 0.20 0.20 3.30 0.20 15.87 0.20 12.42 0.20 2.54typ 6.68 0.20 0.80 0.20 1.47max 2.54 0.20 0.20 0.50 0.20 2.76 0.20 2.54typ 9.75 0.20 3 0.20 { v t y y w m g
|
