shenzhen s ys semiconductors co., ltd. product specification sys semiconductors 2005.12 1 e b series transistors EB102 features high voltage capability high speed switching wide soa application: fluorescent lamp electronic ballast absolute maximum ratings tc=25 c to-92 parameter symbol value unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter- base voltage v ebo 9 v collector current i c 0.4 a total power dissipation p c 8 w junction temperature tj 150 c storage temperature tstg -65-150 c electronic characteristics tc=25 c characteristics symbol test condition min max unit collector-base cutoff current i cbo v cb =600v 100 a collector-emitter cutoff current i ceo v ce =400v,i b =0 250 a collector-emitter voltage v ceo i c =10ma,i b =0 400 v emitter- base voltage v ebo i e =1ma,i c =0 9 v i c =0.1a,i b =10ma 0.5 collector-emitter saturation voltage vcesat i c =0.4a,i b =0.1a 0.7 v base-emitter saturation voltage vbesat i c =0.1a,i b =10ma 1.0 v v ce =5v,i c =1ma 7 v ce =10v,i c =50ma 10 40 dc current gain h fe vce=5v,ic=0.4a 5 storage time t s 1.0 3.0 falling time t f v cc =5v, i c =0.1a, (ui9600) 0.9 s b c e
shenzhen s ys semiconductors co., ltd. product specification sys semiconductors 2005.12 2 1 10 100 0.001 0.01 0.1 1 ic(a) hfe 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 ic(a) vbes(v) 0 20 40 60 80 100 120 0 50 100 150 200 tj( ) % 0.01 0.1 1 10 0.01 0.1 1 ic(a) vces(v) 1 10 100 0.001 0.01 0.1 1 ic(a) hfe 0.01 0.1 1 1 10 100 1000 vce(v) ic(a) eb series transistors EB102 soa (dc) pc tj h fe - ic h fe - ic vces - ic vbes - ic vce=1.5v tj=25 i s/b ptot vce=5v h fe =5 h fe =5 tj= ? 40 tj=125 tj=125 tj=25 tj= ? 40 tj=25 tj= ? 40 tj=125 t j =25 tj= ? 40 tj=125
shenzhen s ys semiconductors co., ltd. product specification sys semiconductors 2005.12 3 to-92 mechanical data unit mm symbol min nom max a 4.3 5.3 b 0.3 c 0.3 d d 4.3 5.2 d 1.0 1.7 e 3.2 4.2 e 2.54 e1 1.27 l 12.7 l1 2.0
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