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1. product profile 1.1 general description the BGU8052 is a low noise high linearity amplifier fo r wireless infrastructure applications, equipped with fast shutdown to support tdd systems. the lna has a high input and output return loss and is designed to operate between 1.5 ghz and 2.5 ghz. it is housed in a 2 mm ? 2 mm ? 0.75 mm 8-terminal plastic thin small outline package. the lna is esd protected on all terminals. 1.2 features and benefits ? low noise performance: nf = 0.50 db ? high linearity performance: ip3 o = 36 dbm ? high input return loss > 15 db ? high output return loss > 20 db ? unconditionally stable up to 20 ghz ? programmable bias current (via resistor) ? small 8-terminal leadless package 2 mm ? 2 mm ? 0.75 mm ? esd protection on all terminals ? moisture sensitivity level 1 ? fast shutdown to support tdd systems ? +5 v single supply 1.3 applications ? wireless infrastructure ? low noise and high linearity applications ? lte, w-cdma, cdma, gsm ? general purpose wireless applications ? tdd or fdd systems ? suitable for small cells BGU8052 low noise high linearity amplifier rev. 2 ? 30 december 2013 product data sheet + : 6 2 1
BGU8052 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 december 2013 2 of 14 nxp semiconductors BGU8052 low noise high linearity amplifier 1.4 quick reference data [1] connector and printed-circuit board (pcb) losses have been de-embedded. 2. pinning information 2.1 pinning 2.2 pin description table 1. quick reference data f = 1900 mhz; v cc = 5 v; t amb =25 ? c; input and output 50 ? ; rbias = 5.1 k ? ; unless otherwise specified. all rf parameters are measured in an application board as shown in figure 15 with components listed in table 9 optimized for f = 1900 mhz. symbol parameter conditions min typ max unit i cc supply current on state 36 48 60 ma off state - 2.8 - ma g ass associated gain on state 17 18.5 20 db off state - ? 23 - db nf noise figure [1] - 0.50 0.70 db p l(1db) output power at 1 db gain compression - 18 - dbm ip3 o output third-order intercept poi nt 2-tone; tone spacing = 1 mhz; p i = ? 15 dbm per tone 32 36 - dbm fig 1. pin configuration 7 u d q v s d u h q w w r s y l h z w h u p l q d o l q g h [ d u h d d d d l f l f 6 + ' 1 5 ) b 2 8 7 9 % , $ 6 l f q f 5 ) b , 1 table 2. pin description symbol pin description v bias 1 bias voltage rf_in 2 rf input n.c. 3 not connected i.c. 4, 5, 8 internally connec ted. can be grounded or left open in the application. shdn 6 shutdown rf_out 7 rf output gnd exposed die pad ground BGU8052 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 december 2013 3 of 14 nxp semiconductors BGU8052 low noise high linearity amplifier 3. ordering information 4. limiting values [1] case is ground solder pad. 5. recommended operating conditions 6. thermal characteristics [1] case is ground solder pad. [2] thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air. table 3. ordering information type number package name description version BGU8052 hwson8 plastic thermal enhanced very very thin small outline package; no leads; 8 terminals; body 2 ? 2 ? 0.75 mm sot1327-1 table 4. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage -6 v v ctrl(sd) shutdown control voltage - 3 v i cc supply current -85ma p i(rf)cw continuous waveform rf input power - 20 dbm t stg storage temperature ? 40 +150 ?c t j junction temperature - 150 ?c p power dissipation t case ? 125 ?c [1] - 510 mw v esd electrostatic discharge voltage human body model (hbm) according to ansi/esda/jedec standard js-001-2010 -0.9kv charged device model (cdm); according jedec standard 22-c101b -2 kv table 5. characteristics symbol parameter conditions min typ max unit v cc supply voltage 4.75 5 5.25 v z 0 characteristic impedance - 50 - ? t case case temperature ? 40 - +85 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case [1] [2] 50 k/w BGU8052 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 december 2013 4 of 14 nxp semiconductors BGU8052 low noise high linearity amplifier 7. characteristics [1] connector and printed-circuit board (pcb) losses have been de-embedded. [2] for tdd systems where fast switching is required, it is recommended to change c1 and c2 to 100 pf. [1] voltage on pin 6 (shdn). table 7. characteristics f = 1900 mhz; v cc = 5 v; t amb =25 ? c; input and output 50 ? ; rbias = 5.1 k ? ; unless otherwise specified. all rf parameters are measured in an application board as shown in figure 15 with components listed in table 9 optimized for f = 1900 mhz. symbol parameter conditions min typ max unit i cc supply current on state 36 48 60 ma off state - 2.8 - ma g ass associated gain on state 17 18.5 20 db off state - ? 23 - db nf noise figure [1] - 0.50 0.70 db p l(1db) output power at 1 db gain compression -18- dbm ip3 o output third-order intercept po int 2-tone; tone spacing = 1 mhz; p i = ? 15 dbm per tone 32 36 - dbm 2-tone; tone spacing = 1 mhz; p i = ? 15 dbm per tone [2] 30 34 - dbm rl in input return loss on state - 14.5 - db off state - 8.4 - db rl out output return loss - 23 - db isl isolation -23- db t s(pon) power-on settling time p i = ? 20 dbm; shdn (pin 6) from high to low [2] -1.4- ? s t s(poff) power-off settling time p i = ? 20 dbm; shdn (pin 6) from low to high [2] -0.4- ? s k rollett stability factor both on state and off state up to f = 20 ghz 1 - - r pd(shdn) pull-down resistance on pin shdn - 20 - k ? table 8. shutdown control v cc = 5 v; t amb =25 ? c. state v ctrl(sd) [1] (v) on state ? 0.6 off state ? 1.2 BGU8052 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 december 2013 5 of 14 nxp semiconductors BGU8052 low noise high linearity amplifier 7.1 graphs v cc =5v; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c v cc =5v; t amb =25 ? c. (1) i cc =30ma (2) i cc =45ma (3) i cc =60ma fig 2. power gain as a function of frequency; typical values fig 3. power gain as a function of frequency; typical values v cc =5v; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c v cc =5v; t amb =25 ? c. (1) i cc =30ma (2) i cc =45ma (3) i cc =60ma fig 4. noise figure as a function of frequency; typical values fig 5. noise figure as a function of frequency; typical values d d d i * + ] * s * s g % g % g % d d d i * + ] * s * s g % g % g % d d d i * + ] 1 ) 1 ) 1 ) g % g % g % d d d i * + ] 1 ) 1 ) 1 ) g % g % g % BGU8052 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 december 2013 6 of 14 nxp semiconductors BGU8052 low noise high linearity amplifier v cc =5v; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c v cc =5v; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 6. input return loss as a function of frequency; typical values fig 7. output return loss as a function of frequency; typical values v cc =5v; t amb =25 ? c; i cc = 48 ma. v cc =5v; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 8. wideband s-parameters as function of frequency; typical values fig 9. rollet stability factor as a function of frequency; typical values d d d i * + ] 5 / 5 / l q l q 5 / l q g % g % g % d d d i * + ] 5 / 5 / r x w r x w 5 / r x w g % g % g % d d d i * + ] v s d u v v s d u v v s d u v g % g % g % 6 6 6 6 6 6 6 6 d d d i * + ] . . BGU8052 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 december 2013 7 of 14 nxp semiconductors BGU8052 low noise high linearity amplifier v cc =5v; p i = ? 15 dbm per tone; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c v cc =5v; p i = ? 15 dbm per tone; t amb =25 ? c. (1) f = 1500 mhz (2) f = 1900 mhz (3) f = 2500 mhz fig 10. output third-order intercept point as a function of frequency; typical values fig 11. output third-order in tercept point as a function of supply current; typical values v cc =5v; i cc = 48 ma. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c v cc =5v; t amb =25 ? c. (1) f = 1500 mhz (2) f = 1900 mhz (3) f = 2500 mhz fig 12. output power at 1 db gain compression as a function of frequency; typical values fig 13. output power at 1 db gain compression as a function of supply current; typical values d d d i * + ] , 3 , 3 2 , 3 2 g % p g % p g % p d d d , & |