jetieu ^etni-tlonductoi c/ tj ., u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BDY74 description ? excellent safe operating area ? collector-emitter sustaining voltage- : vceo(sus)= 120v(min.) ? collector-emitter saturation voltage- :vce(sat)=1.0v(max)@lc = 3a applications ? designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic icp ib pc tj tstg parameter collector-base voltage collector-emitter voltage em itter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation@tc=25c junction temperature storage temperature value 150 120 7 10 15 7 117 200 -65-200 unit v v v a a a w ?c c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 1.5 unit "c/w pin t. base 2. biflltter 3. collect or (case) to-3 package dim a b -jl, d e 0 h k l n g u v iran urn max 3900 25.30 7.80 090 t.40 2867 8.30 1.10 1.60 10,32 546 1140 1675 1s.40 , 4.00 30 00 4.30 1350 iros 1962 420 3020 450 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY74 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vcex(sus) vce(sat) vee(on) icbo icex iebo mfe fr parameter collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current gain-bandwidth product conditions lc=200ma;lb=0;l=25mh lc= 100ma; vbe= -1.5v lc= 3a; ib= 0.3a lc= 3a; vce= 4v vcb=130v;ie=0 vce=1 30v; vbe(om= 1-5v vce= 130v; vbe(ofl)= 1-5v tc= 150'c veb= tv; lc= 0 lc= 3a; vce= 4v lc=1a;vge=10v min 120 150 50 0.8 max 1.0 1.7 1.0 1.0 10 5.0 150 unit v v v v ma rria ma mhz
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