WNM70N80 n-channel 60 v 0.007 ? 80a to-220 power mosfet descriptions the WNM70N80 uses advanced trench technology. and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. standard product WNM70N80 is pb-free(meets rohs & sony 259 specifications). features z v ds = 60 v z i d =80a(v gs =10v) z typical r ds (on)=0.007 ? z exceptional dv/dt capability z 100% avalanche tested z applications z solenoid and relay drivers z dc motor control z dc-dc converters z automotive envirnment absolute maximum ratings parameter symbol value unit drain-source voltage v ds 60 gate-source voltage v gs 25 v t c =25c g 80 continuous drain current t c =100c i d 56 a pulse drain current c i dm 200 a single avalanche current h i as 54 a single avalanche energy h l=0.3mh e as 437 mj t c =25c 104 power dissipation t c =100c p d 41 w operating junction temper ature range t j storage temperature range t stg -55c ~+150 c (top view) pin connections and marking diagram to-220 g d s (2) (1) (3) for to-220 xx = specific device code y = voltage z = date code 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient thermal resistance a r ja 81 100 junction-to-case thermal resistance b r jc 1.2 1.5 c/w a. the value of r ja is measured with the device in a still air environment with t a =25 c . b. the power dissipation pd is based on t j(max) =150 c , using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heat-sink is used. c. repetitive rating, pulse width li mited by junction temperature t j(max) = 150 c . d. the r ja is the sum of the thermal impedance from junction to case r jc and case to ambient. e. the static characteristics in figures1 to 6 are obtained using<300us pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heat-sink, assuming a maximum junction temperature of t j(max) =150 c . g. the maximum current rating is limited by bond-wires. h. start from id=39a, t a =25 c , v dd =37.5v, v gs =15v, l=0.3mh. WNM70N80 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 60 70 v zero gate voltage drain current i dss v ds =60v, v gs = 0v 100 na gate-to-source leakage current i gss v ds = 0 v, v gs =25v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 2.0 3.1 4.0 v drain-to-source on-resistance r ds(on) v gs = 10v, i d = 30a 7. 0 9.0 m ? charges, capacitances and gate resistance input capacitance c iss 1900 output capacitance c oss 305 reverse transfer capacitance c rss vds=30v, vgs=0v, f=1mhz 235 pf total gate charge q g(tot) 123 gate-to-source charge q gs 33 gate-to-drain charge q gd vds= 30v, id = 30a, vgs= 10v 30 nc switching characteristics turn-on delay time td(on) 24.5 rise time tr 17.5 turn-off delay time td(off) 185 fall time tf vgs= 10v, vdd = 30 v, id= 30a, rgen=6.0
58 ns body diode characteristics forward voltage v sd v gs =0v, i s =1a 0.7 1.5 v WNM70N80 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics on-resistance vs. drain current on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage body diode forward voltage -50 -25 0 25 50 75 100 125 150 4 6 8 10 12 14 16 rds(on)-on resistance (mo) tem p erature ( 0 c ) vgs=10v, id=30a 0 1020304050607080 4 5 6 7 8 9 10 vgs=10v r ds(on) (mohm) i ds (a) 45678910 0 5 10 15 20 25 30 id=30a r ds(on) (mohm) v gs (v) 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 t=25 0 c i s (a) v sd (v) WNM70N80 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
gate charge characteristics safe operate area capacitance transient thermal response (junction to case) 0 25 50 5 100 125 150 0 2 4 6 8 10 7 v gs (v) qg(nc) 0 5 10 15 20 25 30 400 800 1200 1600 2000 2400 2800 cout crss cin capacitance (pf) v ds (v) v ds =30v, id=30a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) z t jc normalized transient thermal resistance single pulse d=t on /t t j,pk =t c +p dm .z t jc .r t jc r t jc =1.2c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) 10 p s 10ms 1ms dc r ds(on) limited t j(max) =150c, t c =25c WNM70N80 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
current de-rating (note b) power de-rating (note b) 0 25 50 75 100 125 150 0 20 40 60 80 100 120 power dissipation (w) tcase ( 0 c) WNM70N80 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions min max min max a 4.470 4.670 0.176 0.184 a1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 d 10.010 10.310 0.394 0.406 e 8.500 8.900 0.335 0.350 e1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 f 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 l 13.400 13.800 0.528 0.543 l1 3.560 3.960 0.140 0.156 ? 3.735 3.935 0.147 0.155 symbol dimensions in millimeters dimensions in inches 0.100 typ 2.540 typ WNM70N80 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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