? semiconductor components industries, llc, 2012 june, 2012 ? rev. 14 1 publication order number: njd2873t4/d njd2873t4g, NJVNJD2873T4G power transistors npn silicon dpak for surface mount applications designed for high ? gain audio amplifier applications. features ? high dc current gain ? h fe = 120 (min) @ i c = 500 ma = 40 (min) @ i c = 2 a ? low collector ? emitter saturation voltage ? v ce(sat) = 0.3 vdc (max) @ i c = 1 a ? high current ? gain ? bandwidth product ? f t = 65 mhz (min) @ i c = 100 ma ? epoxy meets ul 94 v ? 0 @ 0.125 in ? esd ratings: ? human body model, 3b > 8000 v ? machine model, c > 400 v ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free packages maximum ratings rating symbol value unit collector ? base voltage v cb 50 vdc collector ? emitter voltage v ceo 50 vdc emitter ? base voltage v eb 5 vdc collector current continuous peak i c 2 3 adc base current i b 0.4 adc total device dissipation @ t c = 25 c derate above 25 c p d 15 0.1 w w/ c total device dissipation @ t a = 25 c* derate above 25 c p d 1.68 0.011 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. device package shipping ? ordering information silicon power transistors 2 amperes 50 volts 15 watts ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. marking diagram a = assembly location y = year ww = work week g = pb ? free device dpak case 369c style 1 ayww j 2873g http://onsemi.com njd2873t4g dpak (pb ? free) 2,500 units / reel NJVNJD2873T4G dpak (pb ? free) 2,500 units / reel 1 1 base 3 emitter collector 2,4 2 3 4 free datasheet http:///
njd2873t4g, NJVNJD2873T4G http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance junction ? to ? case junction ? to ? ambient (note 1) r jc r ja 10 89.3 c/w 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (note 2) (i c = 10 madc, i b = 0) v ceo(sus) 50 ? vdc collector cutoff current (v cb = 50 vdc, i e = 0) i cbo ? 100 nadc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 100 nadc on characteristics dc current gain (note 2) (i c = 0.5 a, v ce = 2 v) (i c = 2 adc, v ce = 2 vdc) (i c = 0.75 adc, v ce = 1.6 vdc, ? 40 c t j 150 c) h fe 120 40 80 360 ? 360 ? collector ? emitter saturation voltage (note 2) (i c = 1 a, i b = 0.05 a) v ce(sat) ? 0.3 vdc base ? emitter saturation voltage (note 2) (i c = 1 a, i b = 0.05 adc) v be(sat) ? 1.2 vdc base ? emitter on voltage (note 2) (i c = 1 adc, v ce = 2 vdc) (i c = 0.75 adc, v ce = 1.6 vdc, ? 40 c t j 150 c) v be(on) ? ? 1.2 0.95 vdc dynamic characteristics current ? gain ? bandwidth product (note 3) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) f t 65 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) c ob ? 80 pf 2. pulse test: pulse width = 300 s, duty cycle 2%. 3. f t = ? h fe ?? f test . free datasheet http:///
njd2873t4g, NJVNJD2873T4G http://onsemi.com 3 typical characteristics ? 40 c 0.4 0.01 0.1 1 10 i c , collector current (amps) v ce(sat) , collector ? emitter saturation voltage (v) ic/ib = 20 ? 40 c 1.2 0.01 0.1 1 10 i c , collector current (amps) v be(sat) , base ? emitter saturation voltage (v) 100 c 25 c ic/ib = 20 1.0 0.8 0.6 0.4 0.2 ? 40 c 100 1000 0.01 0.1 1 10 i c , collector current (amps) h fe , dc current gain 100 c v ce = 2.0 v 10 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 15 10 5 20 p d , power dissipation (watts) figure 2. dc current gain figure 3. collector ? emitter saturation voltage figure 4. base ? emitter saturation voltage figure 5. base ? emitter voltage 25 c 150 c 175 c 25 c 100 c 150 c 175 c 175 c 150 c ? 40 c i c , collector current (amps) v be(on) , base ? emitter voltage (v) 100 c 25 c v ce = 2.0 v 175 c 150 c 0.3 0.2 0.1 0 1.1 0.9 0.7 0.5 0.3 1.2 1.0 0.8 0.6 0.4 0.2 1.1 0.9 0.7 0.5 0.3 0.01 0.1 1 10 175 200 0 free datasheet http:///
njd2873t4g, NJVNJD2873T4G http://onsemi.com 4 figure 6. saturation region i b , base current (ma) v ce(sat) , collector ? emitter saturation voltage (v) 1.0 0.01 0.1 1 10 0.8 0.6 0.4 0.2 0 100 1000 t a = 25 c 10 ma 100 ma 500 ma 1 a i c = 2 a 0.1 1 10 100 1000 100 10 1 figure 7. capacitance v r , reverse voltage (v) c, capacitance (pf) c ibo c obo t a = 25 c figure 8. saturation region i c , collector current (ma) f tau , current gain bandwidth product (mhz) 100 1 10 100 1000 100 0 10000 v ce = 10 v t a = 25 c 1 10 100 1000 100 10 1 figure 9. capacitance v ce , collector emitter voltage (v) i c , collector current 10000 1 ms 10 ms 100 ms 1 s t, time (ms) 0.01 0.02 0.05 1 2 5 10 20 50 100 200 0.1 0.5 0.2 1 0.2 0.1 0.05 r(t), transient thermal r jc (t) = r(t) jc r jc = 10 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0 (single pulse) resistance (normalized) figure 10. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 free datasheet http:///
njd2873t4g, NJVNJD2873T4G http://onsemi.com 5 package dimensions dpak case 369c issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njd2873t4/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative free datasheet http:///
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