mbr730 thru mbR760 features metal of silicon rectifier,majority carrier conduct on guard ring for transient protection low power loss, high efficiency high current capability, low vf high surge capacity plastic package has ul flammability classification 94v-0 for use in low voltage,high frequency inverters,fre e whelling,and polarity protection applications mechanical data case : to-220ac molded plastic polarity : as marked on the body weight : 0.08 ounces, 2.24 grams mounting position : any max. mounting torque = 0.5 n.m (5.1 kgf.cm) v rms v dc v rrm i (av) i fsm v f mbr730 30 21 30 maximum average forward rectified current (see fig.1) @t c = 125 c peak forward surge current 8.3ms single half sine-wave superimposed on rated load maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum forward voltage (note 1) 7.5 150 - 0.57 0.84 0.72 t j operating temperature range -55 to +150 c t stg storage temperature range -55 to +175 c t j =25 c c j typical junction capacitance (note 3) 400 pf a a v unit v v characteristics symbol voltage rate of change (rated vr ) t j =125 c dv/dt 10000 v/us i f =7.5a @ i f =7.5a @ i f =15a @ i f =15a @ mbr735 35 24.5 35 mbr740 40 28 40 mbr745 45 31.5 45 mbr750 50 35 50 mbR760 60 42 60 v 0.75 0.65 -- i r @t j =125 c maximum dc reverse current at rated dc blocking voltage @t j =25 c 0.1 15 ma 0.5 50 typical thermal resistance (note 2) 3.5 c/w r 0jc t j =25 c to-220ac all dimensions in millimeter to-220ac dim. min. max. a c d ef gh b 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 5.33 n m l k j i 1.14 4.83 0.64 0.30 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 a b c k j i g f e d n m l h pin 1 pin 2 case pin 1 2 schottky barrier rectifiers reverse voltage - 30 to 60 volts forward current - 7.5 amperes notes : 1. 300us pulse width, duty cycle 2% 2. thermal resistance junction to ca se. 3. measured at 1.0mhz and applied re verse voltage of 4.0v dc. t j =125 c semiconductor lite-on maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inducti ve load. for capacitive load, derate current by 20% rev. 4,aug-2007, ktha02
rating and characteristic curves mbr730 thru mbR760 instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0.5 0.6 0.1 1.0 0.9 instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.1 1.0 10 100 0.1 pulse width 300us 2% duty cycle t j = 25 c percent of rated peak reverse voltage ,(%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0 0.001 0.1 1.0 100 10 60 80 100 t j = 125 c 0.01 t j = 25 c t j = 75 c mbr730 ~ mbr745 mbr750 ~ mbR760 fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 10000 1000 100 0.1 4 fig.1 - forward current derating curve average forward current amperes 25 75 100 125 150 2 0 50 8 175 6 0 4 resistive or inductive load 10 case temperature , c fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 0 50 100 150 8.3ms single half-sine-wave t j = 25 c, f= 1mhz
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