smd type ic smd type mosfet features p-channel enhancement mode logic level avalanche rated dv /dt rated ideal for fast switching buck converter absolute maximum ratings ta = 25 parameter symbol 10 secs steady state unit continuous drain current t a =25 -9.1 -7.4 t a =70 -7.3 -5.9 pulsed drain current t a =25 i dp a avalanche energy, single pulse *1 e as mj reverse diode dv /dt *2 d v /d t kv/ s gate source voltage v gs v power dissipation p d 2.36 1.56 w thermal resistance,junction - soldering point r thjs k/w thermal resistance,junction - ambient r thja k/w operating and storage temperature t j ,t stg *1 i d =-9.1a, r gs =25 *2 i d =-9.1a, v ds =20 v,d i /d t =200 a/ s,t j,max =150 -55 to 150 i d 35 110 a -37 98 -6 25 kso200p03s (bso200p03s) product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v dss v gs =0 v, i d =-250 a -30 v v ds =-30v, v gs =0v,t j =25 -0.1 -1 v ds =-30 v, v gs =0 v,t j =125 -10 -100 gate-source leakage current i gss v gs = 25 v, v ds =0 v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =-100 a -1 -1.5 v drain-source on-state resistance r ds(on) v gs =-10 v, i d =-9.1a 16.7 20.0 m forward transconductance g fs |v ds |>2|i d |r ds(on)max ,i d =-7.3 a 11 21 s input capacitance c iss 1750 2330 output capacitance c oss 470 625 reverse transfer capacitance c rss 390 580 turn-on delay time t d(on) 10 53 rise time t r 11 17 turn-off delay time t d(off) 42 63 fall time t f 33 50 gate to source charge q gs 4.8 6.4 gate charge at threshold q g(th) 2.6 3.5 gate to drain charge q gd 14 switching charge q sw 16 24 gate charge total q g 40 54 output charge q oss v dd =-15v, v gs =0v 14 19 nc reverse recovery time trr 19 24 ns reverse recovery charge q rr 911nc diode continous forward current i s -2.1 a diode pulse curret i sm -36.5 a diode forward voltage v sd v gs =0 v, i f =-9.1 a,t j =25 -0.88 -1.2 v nc v r =15v, i f =-9.1a,d if /d t =100a/ s a v gs =0v, v ds =-25v,f =1 mhz v dd =-15 v,v gs =-10 v,i d =-1a, r g =6 pf ns i dss zero gate voltage drain current t a =25 v dd =-24v, i d =9.1a,v gs =0 to-10 v smd type ic smd type mosfet kso200p03s (bso200p03s) product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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