13001 npn epitaxial silicon transistor elite enterprises (h.k.) co., ltd. part no.: 13001 flat 2505, 25/f., nanyang plaza, 57 hung to road, kwun tong, h.k. tel: (852) 2723-3122 fax: (852) 2723-3990 email: info@elite-ent.com.hk page: 1 / 1 features collector-emitter voltage: v ceo = 400v collector dissipation: p c (max)= 1000mw absolute maximum ratings (ta=25 o c) characteristic symbol rating unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v collector current i c 200 ma collector dissipation p c 1000 mw junction temperature t j 150 o c storage temperature t stg -55~+150 o c electrical characteristics (ta=25 o c) characteristic symbol test conditions min max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 600 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 400 v emitter-base breakdown voltage bv ebo i e =100 a, i c =0 7 v collector cut-off current i cbo v cb =600v, i e =0 100 g a collector cut-off current i ceo v ce =400v, i b =0 200 g a emitter cut-off current i ebo v eb =7v, i c =0 100 g a dc current gain h fe(1) v ce =20v, i c =20ma 10 40 h fe(2) v ce =10v, i c =0.25ma 5 collector-emitter saturation voltage v ce(sat) i c =50ma, i b =10ma 0.5 v base-emitter saturation voltage v be(sat) i c =50ma, i b =10ma 1.2 v base-emitter voltage v be i e = 100ma 1.1 v transition frequency f f v ce =20v, i c =20ma f=1mhz 8 mhz fall time t f ic=50ma, i b1 =-1 b2 =5ma, 0.3 s storage time t s vcc= 45v 1.5 s h fe (1) classification classification h fe(1) 10-15 15-20 20-25 25-30 30-35 35-40 1. emitter 2. collector 3. base to-126 free datasheet http://
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