power module 1 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN2MM 1200v igbt family MG12300D-BN2MM series 300a dual igbt features applications ? high short circuit capability ,self limiting short circuit current ? igbt 3 chip(trench+field stop technology) ? v ce(sat) with positive temperature coeffcient ? fast switc hing and short tail current ? free wheeling diodes with f ast and soft reverse recovery ? lo w switching losses absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t vj =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 480 a t c =80c 300 a i cm repetitive peak collector current t p =1ms 600 a p tot power dissipation per igbt 1450 w diode v rrm repetitive reverse voltage t vj =25c 1200 v i f(av) average forward current t c =25c 480 a t c =80c 300 a i frm repetitive peak forward current t p =1ms 600 a i 2 t t vj =125c, t=10ms, v r =0v 18000 a 2 s module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t vj max) max. junction temperature 150 c t vj op operating temperature -40 125 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index module case exposed to 0.1% ammonium chloride solution per ul and iec standards 350 v torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m6) 2.5 5 nm weight 320 g ? motor drives ? inverter ? converter ? smps and ups ? welder ? induction heating life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. rohs agency agency file number e71639 agency approvals
power module 2 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN2MM 1200v igbt family symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =12ma 5.0 5.8 6.5 v v ce(sat) collector - emitter saturation voltage i c =300a, v ge =15v, t vj =25c 1. 7 v i c =300a, v ge =15v, t vj =125c 1. 9 v i ces collector leakage current v ce =1200v, v ge =0v, t vj =25c 1 ma v ce =1200v, v ge =0v, t vj =125c 5 ma i ges gate leakage current v ce =0v,v ge =15v, t vj =125c -400 400 a r gint intergrated gate resistor 2.5 q ge gate charge v ce =600v, i c =300a , v ge =15v 2.8 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 21 nf c res reverse transfer capacitance 0.85 nf t d(on) turn - on delay time v cc =600v i c =300a r g =2.4 v ge =15v inductive load t vj =25c 160 ns t vj =125c 170 ns t r rise time t vj =25c 40 ns t vj =125c 45 ns t d(off) turn - off delay time t vj =25c 450 ns t vj =125c 520 ns t f fall time t vj =25c 100 ns t vj =125c 160 ns e on turn - on energy t vj =25c 16.5 mj t vj =125c 25 mj e off turn - off energy t vj =25c 24.5 mj t vj =125c 37 mj i sc short circuit current t psc 10s , v ge =15v 1200 a t vj =125c,v cc =900v r thjc junction-to-case thermal resistance (per igbt) 0.085 k/w diode v f forward voltage i f =300a , v ge =0v, t vj =25c 1.65 v i f =300a , v ge =0v, t vj =125c 1.65 v i rrm max. reverse recovery current i f =300a , v r =600v 270 a q rr reverse recovery charge d if /dt=-6000a/s 56 c e rec reverse recovery energy t vj =125c 26 mj r thjcd junction-to-case thermal resistance (per diode) 0.15 k/w electrical and thermal specifcations (t c = 25c, unless otherwise specifed)
power module 3 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN2MM 1200v igbt family figure 1: t ypical output characteristics i c (a) v ce ?v? t vj =125c t vj =25c 600 500 200 100 0 0 0.5 1.0 1.5 2.0 2.5 v ge =15v 3.0 300 400 figure 2: t ypical output characteristics figure 3: t ypical transfer characteristics figure 4: switching energy vs. gate resistor figure 5: s witching energy vs. collector current figure 6: rev erse biased safe operating area v ge= 19v v ge= 17v v ge= 15v v ge= 13v v ge= 11v v ge= 9v
power module 4 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN2MM 1200v igbt family figure 7: diode f orward characteristics figure 8: s witching energy vs. gate resistort figure 9: s witching energy vs. forward current figure 10: t ransient thermal impedance
power module 5 revised: july 26, 2013 04:44 pm ?2013 littelfuse, inc specifcations are subject to change without notice. please refer to http://www.littelfuse.com for current information. MG12300D-BN2MM 1200v igbt family packing options part number marking weight packing mode m.o.q MG12300D-BN2MM MG12300D-BN2MM 320g bulk pack 30 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type MG12300D-BN2MM voltage rating current rating assembly site 12: 1200v 300: 300a d: package d b: 2x(igbt+fwd) dimensions-package d circuit diagram and pin assignment
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