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vishay siliconix dg441, dg442 document number: 70053 s11-1066-rev. j, 30-may-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 quad spst cmos analog switches description the dg441, dg442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. the dg441 has a normally closed function. the dg442 has a normally open function. combining low on-resistance (50 ? , typ.) with high speed (t on 150 ns, typ.), the dg441, dg442 are ideally suited for upgrading dg201a/202 sockets. charge injection has been minimized on the drain for use in sample-and-hold circuits. to achieve high voltage ratings and superior switching performance, the dg441, dg442 are built on vishay siliconix?s high-voltage silic on-gate process. an epitaxial layer prevents latchup. each switch conducts equally we ll in both directions when on, and blocks input voltages to the supply levels when off. features ? halogen-free according to iec 61249-2-21 definition ? low on-resistance: 50 ? ? low leakage: 80 pa ? low power consumption: 0.2 mw ? fast switching action - t on : 150 ns ? low charge injection - q: - 1 pc ? dg201a/dg202 upgrades ? ttl/cmos-compatible logic ? single supply capability ? compliant to rohs directive 2002/95/ec benefits ? less signal errors and distortion ? reduced power supply requirements ? faster throughput ? improved reliability ? reduced pedestal errors ? simplifies retrofit ? simple interfacing applications ? audio switching ? battery powered systems ? data acquisition ? hi-rel systems ? sample-and-hold circuits ? communication systems ? automatic test equipment ? medical instruments functional block diagram and pin configuration logic "0" ?? 0.8 v logic "1" ?? 2.4 v dg441 dg441 dual-in-line and soic in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd nc s 4 s 3 d 4 d 3 in 4 in 3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 top view 9 s 1 nc s 2 in 3 v- d 3 v+ d 4 nc in 4 nc nc gnd in 2 nc d 2 s 4 d 1 s 3 in 1 key top view lcc 910111213 4 5 6 7 8 1 2 319 20 14 15 16 17 18 truth table logic dg441 dg442 0 on off 1offon
www.vishay.com 2 document number: 70053 s11-1066-rev. j, 30-may-11 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on s x , d x , or in x exceeding v+ or v- will be clamped by internal diodes . limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 6 mw/c above 75 c. d. derate 12 mw/c above 75 c. schematic diagram typical channel ordering information temp. range package part number - 40 c to 85 c 16-pin plastic dip dg441dj dg441dj-e3 dg442dj dg442dj-e3 16-pin narrow soic dg441dy dg441dy-e3 DG441DY-T1 DG441DY-T1-e3 dg442dy dg442dy-e3 dg442dy-t1 dg442dy-t1-e3 absolute maximum ratings parameter limit unit v+ to v- 44 v gnd to v- 25 digital inputs a , v s , v d (v-) - 2 to (v+) + 2 or 30 ma, whichever occurs first continuous current (any terminal) 30 ma current, s or d (pulsed at 1 ms, 10 % duty cycle) 100 storage temperature (ak suffix) - 65 to 150 c (dj, dy suffix) - 65 to 125 power dissipation (package) b 16-pin plastic dip c 450 mw 16-pin cerdip d 900 16-pin narrow soic d 900 lcc-20 d 1200 figure 1. in x 5 v reg level shift/ drive v+ gnd v- v- v+
document number: 70053 s11-1066-rev. j, 30-may-11 www.vishay.com 3 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications a (dual supplies) parameter symbol test conditions unless otherwise specified v+ = 15 v, v- = - 15 v v in = 2.4 v, 0.8 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 15 15 - 15 15 v drain-source on-resistance r ds(on) i s = - 10 ma, v d = 8.5 v v+ = 13.5 v, v- = - 13.5 v room full 50 85 100 85 100 ? on-resistance match between channels e ? r ds(on) i s = - 10 ma, v d = 10 v v+ = 15 v, v- = - 15 v room full 4 5 4 5 switch off leakage current i s(off) v+ = 16.5, v- = - 16.5 v v d = 15.5 v, v s = 15.5 v room full 0.01 - 0.5 - 20 0.5 20 - 0.5 - 5 0.5 5 na i d(off) room full 0.01 - 0.5 - 20 0.5 20 - 0.5 - 5 0.5 5 channel on leakage current i d(on) v+ = 16.5 v, v- = - 16.5 v v s = v d = 15.5 v room full 0.08 - 0.5 - 40 0.5 40 - 0.5 - 10 0.5 10 digital control input current v in low i il v in under test = 0.8 v, all other = 2.4 v full - 0.01 - 500 500 - 500 500 na input current v in high i ih v in under test = 2.4 v all other = 0.8 v full 0.01 - 500 500 - 500 500 dynamic characteristics tu r n - o n t i m e t on r l = 1 k ? , c l = 35 pf v s = 10 v see figure 2 room 150 250 250 ns turn-off time dg441 t off room 90 120 120 dg442 room 110 210 210 charge injection e q c l = 1 nf, v s = 0 v v gen = 0 v, r gen = 0 ? room - 1 pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 1 mhz room 60 db crosstalk (channel-to- channel) x ta l k room 100 source off capacitance e c s(off) f = 1 mhz room 4 pf drain off capacitance e c d(off) room 4 channel on capacitance e c d(on) v analog = 0 v room 16 power supplies positive supply current i+ v+ = 16.5 v, v- = - 16.5 v v in = 0 or 5 v full 15 100 100 a negative supply current i- room full - 0.0001 - 1 - 5 - 1 - 5 ground current i gnd full - 15 - 100 - 100
www.vishay.com 4 document number: 70053 s11-1066-rev. j, 30-may-11 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datash eet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications a (single supply) parameter symbol test conditions unless otherwise specified v+ = 12 v, v- = 0 v v in = 2.4 v, 0.8 v f temp. b typ. c a suffix - 55 c to 125 c d suffix - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0 12 0 12 v drain-source on-resistance r ds(on) i s = - 10 ma, v d = 3 v, 8 v v+ = 10.8 v room full 100 160 200 160 200 ? dynamic characteristics tu r n - o n t i m e t on r l = 1 k ? , c l = 35 pf v s = 8 v see figure 2 room 300 450 450 ns tu r n - o f f t i m e t off room 60 200 200 charge injection q c l = 1nf, v gen = 6 v, r gen = 0 ? room 2 pc power supplies positive supply current i+ v+ = 13.2 v, v- = 0 v v in = 0 or 5 v full 15 100 100 a negative supply current i- room full - 0.0001 - 1 - 100 - 1 - 100 ground current i gnd full - 15 - 100 - 100
document number: 70053 s11-1066-rev. j, 30-may-11 www.vishay.com 5 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) r ds(on) vs. v d and power su pply voltage r ds(on) vs. v d and unipolar power supply voltage crosstalk and off isolation vs. frequency 20 0 - 20 0 20 60 40 8 0 100 15 v 20 v 5 v 8 v 10 v - 15 - 10 - 5 5 10 15 r ds(on) - drain-so u rce on-resistance ( ) v d - drain v oltage ( v ) 12 v 20 0 0 50 150 200 100 250 300 v+ = 5 v 8 v 10 v 12 v 15 v 20 v v - = 0 v 4 8 12 16 r ds(on) - drain-source on-resistance ( ? ) v d - drain v oltage (v) (- db) 0 20 40 80 100 60 120 140 1k 10k 100k 1m 10m 100 v+ = 15 v v- = - 15 v ref. 10 dbm off isolation crosstalk f - frequency (hz) r ds(on) vs. v d and temperature r ds(on) vs. v d and temperature (single 12-v supply) charge injection vs. source voltage 15 0 - 15 0 20 50 30 70 80 40 60 10 125 c 25 c 85 ? c - 40 c v+ = 15 v v- = - 15 v - 10 - 5 5 10 v d - drain voltage (v) r ds(on) - drain-source on-resistance ( ? ) - 55 c 0 c 12 6 0 0 20 40 80 100 60 120 140 v+ = 12 v v- = 0 v 125 c 25 c - 55 c 85 c 24 810 v d - drain voltage (v) r ds(on) - drain-source on-resistance ( ? ) - 40 c 0 c q - (pc) 10 0 -10 -30 -10 20 0 40 50 10 30 -20 - 5 5 v+ = 15 v v- = - 15 v v+ = 12 v v- = 0 v c l = 1 nf v s - source voltage (v)
www.vishay.com 6 document number: 70053 s11-1066-rev. j, 30-may-11 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) switching threshold vs. supply voltage source/drain leakage currents (single 12 v supply) switching time vs. power supply voltage 0 1.6 0.8 2.4 0 5 10 15 20 v+, v- positive and negative supplies (v) - (v) in v 12 6 0 -40 -30 -10 -20 0 10 v+ = 12 v v- = 0 v for i d , v s = 0 for i s , v d = 0 i s(off) , i d(off) i s(on) + i d(on) 24 810 v d or v s - drain or source voltage (v) - (pa) i , i sd supply voltage (v) t - (ns) 10 12 14 16 18 20 22 160 140 120 20 80 60 40 100 t off t on source/drain leakage currents operating voltage switching time vs. power supply voltage 15 0 -15 - 100 -80 -40 -20 -60 0 20 -10 -5 5 10 v+ = 15 v v- = - 15 v for i (off) , v d = - v s i s(off) , i d(off) i d(on) v d or v s - drain or source voltage (v) - (pa) i , i sd v+ - (v) - 50 - 20 0 0 10 30 40 50 20 - 40 - 30 - 10 44 3 v- v+ d in s v- - negative supply (v) cmos compatible 5 v - cmos compatible ttl compatible v in = 0.8 v, 2.4 v t - (ns) 500 400 0 822 200 100 300 10 12 14 16 18 20 t off t on v- = 0 v v s - source voltage (v)
document number: 70053 s11-1066-rev. j, 30-may-11 www.vishay.com 7 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 2. switching time 0 v logic input switch input switch output 3 v 50 % 0 v v o v s t r < 20 ns t f < 20 ns t off t on note: logic input waveform is inverted for dg442. 50 % 80 % 80 % 10 v c l (includes fixture and stray capacitance) v - v+ in s d 3 v r l 1 k ? c l 35 pf v o - 15 v gnd + 15 v figure 3. charge injection off on off off on off v o ? v o in x in x q = ? v o x c l (dg441) (dg442) c l 1 nf in d v o v- v+ s 3 v r g - 15 v gnd + 15 v figure 4. crosstalk c = 1 mf tantalum in parallel with 0.01 mf ceramic 50 ? d 1 v o r g = 50 ? s 1 + 15 v - 15 v d 2 gnd v+ v- nc c c s 2 r l in 1 x ta l k isolation = 20 log v s v o 0 v, 2.4 v 0 v, 2.4 v v s in 2 c = rf bypass figure 5. off isolation s in r l d r g = 50 ? v s v o 0 v, 2.4 v off isolation = 20 log v s v o v+ - 15 v gnd v- c c + 15 v figure 6. source/drain capacitances s d in + 15 v - 15 v gnd v+ v- c c 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent
www.vishay.com 8 document number: 70053 s11-1066-rev. j, 30-may-11 vishay siliconix dg441, dg442 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 applications vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70053 . figure 7. power mosfet driver + 15 v + 15 v gnd v- v+ 0 = load off 1 = load on + 24 v i = 3 a vn0300 l, m dg442 + 15 v 10 k ? 150 ? r l in figure 8. open loop sample-and-hold h = sample l = hold - 15 v + 15 v v in v out c h sd in 1/4 dg442 + - + - figure 9. precision-weighted resistor programmable-gain amplifier + 15 v - 15 v v+ v- gnd dg441 or dg442 + - v in v out gain error is determined only by the resistor tolerance. op amp offset and cmrr will limit ac- curacy of circuit. gain 1 a v = 1 gain 2 a v = 10 gain 3 a v = 20 gain 4 a v = 100 r 1 90 k ? r 2 5 k ? r 3 4 k ? r 4 1 k ? v out v in = r 1 + r 2 + r 3 + r 4 r 4 = 100 with sw 4 closed
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
e 1 e q 1 a l a 1 e 1 b b 1 s c e a d 15 max 12345678 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71261 06-jul-01 www.vishay.com 1

dim min max min max a 3.81 5.08 0.150 0.200 a 1 0.38 1.27 0.015 0.050 b 0.38 0.51 0.015 0.020 b 1 0.89 1.65 0.035 0.065 c 0.20 0.30 0.008 0.012 d 18.93 21.33 0.745 0.840 e 7.62 8.26 0.300 0.325 e 1 5.59 7.11 0.220 0.280 e 1 2.29 2.79 0.090 0.110 e a 7.37 7.87 0.290 0.310 l 2.79 3.81 0.110 0.150 q 1 1.27 2.03 0.050 0.080 s 0.38 1.52 .015 0.060 ecn: s-03946?rev. d, 09-jul-01 dwg: 5482
e 1 e q 1 a l a 1 e 1 b b 1 l 1 s c e a d 12 3 4 5 6 7 8 16 15 14 13 12 11 10 9 package information vishay siliconix document number: 71282 03-jul-01 www.vishay.com 1
dim min max min max a 4.06 5.08 0.160 0.200 a 1 0.51 1.14 0.020 0.045 b 0.38 0.51 0.015 0.020 b 1 1.14 1.65 0.045 0.065 c 0.20 0.30 0.008 0.012 d 19.05 19.56 0.750 0.770 e 7.62 8.26 0.300 0.325 e 1 6.60 7.62 0.260 0.300 e 1 2.54 bsc 0.100 bsc e a 7.62 bsc 0.300 bsc l 3.18 3.81 0.125 0.150 l 1 3.81 5.08 0.150 0.200 q 1 1.27 2.16 0.050 0.085 s 0.38 1.14 0.015 0.045 0 15 0 15 ecn: s-03946?rev. g, 09-jul-01 dwg: 5403
d l 1 e b l e a 1 a 28 1 2 packaging information vishay siliconix document number: 71290 02-jul-01 www.vishay.com 1

dim min max min max 1.37 2.24 0.054 0.088 1.63 2.54 0.064 0.100 0.56 0.71 0.022 0.028 8.69 9.09 0.342 0.358 8.69 9.09 0.442 0.358 1.27 bsc 0.050 bsc 1.14 1.40 0.045 0.055 1.96 2.36 0.077 0.093 ecn: s-03946?rev. b, 09-jul-01 dwg: 5321
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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