advanced power 2n and 2p-channel enhancement electronics corp. mode power mosfet simple drive requirement low on-resistance n-ch bv dss 30v full bridge application on r ds(on) 35m lcd monitor inverter i d 5.2a rohs compliant p-ch bv dss -30v r ds(on) 72m description i d -3.5a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage -30 v v gs gate-source voltage + 20 v i d @t a =25 continuous drain current 3 -3.5 a i d @t a =70 continuous drain current 3 -2.8 a i dm pulsed drain current 1 -20 a p d @t a =25 total power dissipation 1.38 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice parameter 1 201004261 AP9930AGM thermal data rohs-compliant product 30 + 20 5.2 4.1 20 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. n1g n1d/p1d n1s/n2s n2g p1g p1s/p2s n2d/p2d p2g so-8 n1g n1s p1g p1s p1n1d n2g n2s p2g p2s p2n2d
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =5a - - 35 m ? v gs =4.5v, i d =3a - - 60 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 10 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 1 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 6.3 10 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.5 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ? -15- ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 420 670 pf c oss output capacitance v ds =25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =5a, v gs =0v - 17 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc static drain-source on-resistance 2 r ds(on) 2 AP9930AGM
AP9930AGM p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v v gs =-10v, i d =-3a - - 72 m v gs =-4.5v, i d =-2a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-3a - 8 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -1 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-3a - 6.3 10 nc q gs gate-source charge v ds =-15v - 1.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time 2 v ds =-15v - 5 - ns t r rise time i d =-1a - 8 - ns t d(off) turn-off delay time r g =3.3 -21- ns t f fall time v gs =-10v - 9 - ns c iss input capacitance v gs =0v - 520 830 pf c oss output capacitance v ds =-25v - 120 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-3a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 186 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 r ds(on) static drain-source on-resistance 2
ap9930ag m n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 4 8 12 16 20 001122 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 4 8 12 16 20 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 25 30 35 40 45 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
ap9930ag m n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 5 0 2 4 6 8 10 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =15v 0 200 400 600 800 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 186 /w t t 0.02 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
ap9930ag m p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-3a v g = -10 v 0 4 8 12 16 20 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v g =-4.0v 0 5 10 15 20 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -6.0v -5.0v v g =-4.0v 50 60 70 80 90 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t a =25 0 2 4 6 8 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -v sd ,source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
ap9930ag m p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 0 200 400 600 800 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 024681012 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-3a v ds =-15v t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 186 /w t t 0.02 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse operation in this area limited by r ds(on)
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