5 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 8 0 0 s d 8 0 r f eb 25, 2 0 1 3 preliminary data sheet nx6352gp series laser diode 1 270/1 290/1 310/1 330/1 350 nm alga i nas m qw-dfb laser d iode for 9.8 gb/s cp ri and 10g e-pon onu applica tion des cript ion t h e nx635 2gp series is a 1 2 7 0 / 1 290 / 1 310 / 1 3 30/ 1 3 5 0 n m m u ltip le q u a n t u m w ell (mqw) stru c t ure d distribu ted feed-back (dfb) laser d i o d e with ingaas m onito r pin-pd. applications ? 9 . 8 g b p s c pr i ? 1 0 g e-p o n o nu fea t ure s ? o p tical o u tpu t p o wer p o = 8.5 m w ? l o w t h res hol d cur r ent i th = 7 m a ? diffe re ntial efficiency d = 0.35 w /a ? w i de operating tem p erature range t c = ? 4 0 t o + 8 5 c ? i n g a as m onitor p in- p d ? c a n p ac k a g e 5.6 mm ? f ocal poi n t 7 . 5 m m r08 d s0 088e j01 00 rev.1.00 feb 25, 20 13 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
nx6352gp series chapter title r08ds0088ej0100 rev.1.00 page 2 of 5 feb 25, 2013 package dimensions (unit: mm) pin connections bottom view 1.00.1 15.01.0 1.20.1 3.970.15 7.50.5 110 2 (0.3) *2 (0.3) *2 x = 200 m max. y = 200 m max. ? ? 2.0 p. c . d 4? 0.45 ( 4.3) *2 ( 3.75) *2 *1 focal point: a point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension . ( 5.6) *2 focal point *1 reference plane 1 2 3 4 1 2 3 4 ld pd a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
nx6352gp series chapter title 5 fo 3 egap 00.1.ver 0010je8800sd80r f eb 25 , 2013 ordering information p ar t number p ac kage pin conn ectio ns nx63 52g pxx -az ? 1 4-pin can with aspher ical lens cap 1 2 3 4 ld pd note: 1. t he la st two di gi ts (?xx?) of part number in dicates w av el ength code . t he relations hi ps be twe en th e code and wave le ng th are as foll ows. wavelength code wavelength (nm) 072 1 72 092 1 92 013 1 13 033 1 33 053 1 53 rem ar ks 1. t he color of lens cap mi ght be observ ed diff erent ly. 2. t he hermetic test wi ll be per fo rmed as aql 1.0%. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
nx6352gp series chapter title r08ds0088ej0100 rev.1.00 page 4 of 5 feb 25, 2013 absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power p o 15 mw forward current of ld i f 120 ma reverse voltage of ld v r 2.0 v forward current of pd i f 10.0 ma reverse voltage of pd v r 15 v operating case temperature t c ? 40 to +85 c storage temperature t stg ? 40 to +95 c lead soldering temperature t sld 350 (3 sec.) c relative humidity (noncondensing) rh 85 % recommended ld drive current at module level parameter symbol conditions min. typ. max. unit t c = 25 c ? 30 ? bias current i bias t c = 85 c ? ? 70 ma electro-optical characteristics (t c = ? 40 to +85 c, cw, bol, unless otherwise specified) parameter symbol conditions min. typ. max. unit signaling rate ? 9.8304 ? gb/s optical output power p o ? 8.5 ? mw operating voltage v op p o = 8.5 mw ? ? 2.0 v threshold current i th t c = 25 c ? 7 15 ma ? ? 30 differential efficiency d p o = 8.5 mw, t c = 25 c 0.23 ? ? w/a p o = 8.5 mw 0.13 ? ? nx6352gp27 1 260 ? 1 280 nx6352gp29 1 280 ? 1 300 nx6352gp31 1 300 ? 1 320 nx6352gp33 1 320 ? 1 340 peak emission wavelength p p o = 8.5 mw nx6352gp35 1 340 1 360 nm side mode suppression ratio smsr p o = 8.5 mw 35 ? ? db rise time t r 20-80% ? 1 ? ? 50 ps fall time t f 80-20% ? 1 ? ? 50 ps monitor current i m v r = 1.5 v, p o = 8.5 mw 100 ? 1 000 a monitor dark current i d v r = 3.3 v, t c = 25 c ? ? 10 na v r = 3.3 v ? ? 100 monitor pd terminal capacitance c t v r = 3.3 v, f = 1 mhz ? ? 20 pf note: 1. 9.8304 gb/s, prbs 2 31 ? 1, nrz, duty cycle = 50% a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
nx6352gp series chapter title r08ds0088ej0100 rev.1.00 page 5 of 5 feb 25, 2013 safety information on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor lase r warning laser beam a laser beam is emitted from this diode during operation. the laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam. caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history nx6352gp series data sheet description rev. date page summary 1.00 feb 25, 2013 ? first edition issued
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