dtc114g series npn 100ma 50v digital transistors (bias resistor built-in transistors) datasheet l l outline parameter value umt3 smt3 v ceo 50 v i c 100 ma r 10 k dtc114gua dtc114gka sot-323(sc-70) sot-346(sc-59) l l features l l inner circuit 1) built-in biasing resistor 2) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of completely eliminating parasitic effects. 4) complementary pnp types: dta114g series 5) lead free/rohs compliant. b: base c: collector e: emitter l l application switching circuit, inverter circuit, interface circuit, driver circuit l l packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking dtc114gua umt3 2021 t106 180 8 3000 k24 dtc114gka smt3 2928 t146 180 8 3000 k24 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 1/5 20121023 - rev. 001
dtc114g series datasheet absolute maximum ratings (t a = 25c) parameter symbol values unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma power dissipation dtc114gua p d *1 200 mw dtc114gka 200 junction temperature t j 150 range of storage temperature t stg -55 to + 150 electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = 50 a 50 - - v collector-emitter breakdown voltage bv ceo i c = 1 ma 50 - - v emitter-base breakdown voltage bv ebo i e = 720 a 5 - - v collector cut-off current i cbo v cb = 50 v - - 0.5 a emitter cut-off current i ebo v eb = 4 v 300 - 580 a collector-emitter saturation voltage v ce(sat) i c / i b = 10 ma / 0.5 ma - - 0.3 v dc current gain h fe v ce = 5 v, i c = 5 ma 30 - - - emitter-base resistance r - 7 10 13 k transition frequency f t *2 v ce = 10 v, i e = -5 ma, f = 100 mhz - 250 - mhz *1 each terminal mounted on a reference footprint *2 characteristics of built-in transistor www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 2/5 20121023 - rev. 001
dtc114g series datasheet electrical characteristic curves (t a =25c) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics fig.3 dc current gain vs. collector current fig.4 collector-emitter saturation voltage vs. collector current www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 3/5 20121023 - rev. 001
dtc114g series datasheet dimensions www.rohm.com ? 2012 rohm co., ltd. all rights reserved. 4/5 20121023 - rev. 001
datasheet
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