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| microwave power gaas fet microwave semiconductor TIM5964-16SL-422 technical data features ? low intermodulation distortion ? high gain im3=-45 dbc at pout= 31.5dbm g1db=8.0db(min.) at 5.85ghz to 6.75ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=42.5dbm at 5.85ghz to 6.75ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 41.5 42.5 ? power gain at 1db gain compression point g 1db db 8.0 ? ? drain current i ds1 a ? 4.4 5.0 gain flatness g db ? ? 0.8 power added efficiency add vds= 10v f= 5.85 to 6.75ghz % ? 35 ? 3 rd order intermodulation distortion im3 dbc -42 -45 ? drain current ids2 two-tone test po=31.5dbm (single carrier level) a ? 4.4 5.0 channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 80 recommended gate resistance(rg): 100 (max.) electrical character istics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 6a ms ? 3600 ? pinch-off voltage v gsoff v ds = 3v i ds = 60ma v -1.0 -2.5 -4.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 10.5 ? gate-source breakdown voltage v gso i gs = -200 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 1.5 2.0 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. oct. 2006
2 TIM5964-16SL-422 absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 14.0 total power dissipation (tc= 25 c) p t w 75.0 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (2-16g1b) unit in mm (1) gate (2) source (3) drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 3 TIM5964-16SL-422 output power vs. frequency v ds =10v i ds ? 4.4a pin=33.5dbm output power(pout) vs. input power(pin) freq.=6.3ghz v ds =10v i ds ? 4.4a pout add rf performance 45 44 43 42 pout(dbm) 5.75 6.0 6.25 6.5 6.75 43 42 41 40 41 40 39 38 37 36 pout(dbm) 80 70 60 50 40 30 20 10 add(%) 26 28 30 32 34 36 frequency (ghz) pin(dbm) 4 TIM5964-16SL-422 power dissipation vs. case temperature 90 60 30 0 0 40 80 120 160 tc ( c) 200 pt (w) im3 vs. output po wer characteristics v ds =10v i ds ? 4.4a freq.=6.3ghz f=5mhz 26 28 30 32 34 36 -10 -20 -30 -40 -50 -60 im3(dbc) pout(dbm) @single carrier level |
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