cystech electronics corp. spec. no. : c606e3-a issued date : 2005.01.03 revised date :2008.01.30 page no. : 1/4 BTN1101E3 cystek product specification low vcesat npn epitaxial planar transistor BTN1101E3 features ? low v ce (sat) ? high bv ceo ? excellent current gain characteristics ? rohs compliant package symbol outline BTN1101E3 to-220ab b base c collector e emitter b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 6 v collector current (dc) i c 10 collector current (pulse) i cp 20 (note 1) a power dissipation @ t a =25 p d 2 power dissipation @ t c =25 p d 50 w thermal resistance, junction to ambient r ja 62.5 c/w thermal resistance, junction to case r jc 2.5 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : 1. single pulse , pw Q 380 s,duty Q 2%.
cystech electronics corp. spec. no. : c606e3-a issued date : 2005.01.03 revised date :2008.01.30 page no. : 2/4 BTN1101E3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv ceo(sus) 80 - - v i c =30ma, i b =0 i ces - - 10 a v ce =80v, v be =0 i ebo - - 50 a v eb =5v, i c =0 *v ce(sat) - 0.3 0.6 v i c =8a, i b =0.4a *v be(sat) - 1.0 1.5 v i c =8a, i b =0.8a *h fe 120 - - - v ce =1v, i c =2a *h fe 100 - - - v ce =1v, i c =4a f t - 50 - mhz v ce =6v, i c =500ma, f=20mhz cob - 130 - pf v cb =10v, f=1mhz *pulse test : pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c606e3-a issued date : 2005.01.03 revised date :2008.01.30 page no. : 3/4 BTN1101E3 cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v saturation voltage vs collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vce(sat) ic=10ib ic=20ib ic=50ib ic=100ib saturation voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat) @ ic=10ib power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 10 20 30 40 50 60 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c606e3-a issued date : 2005.01.03 revised date :2008.01.30 page no. : 4/4 BTN1101E3 cystek product specification to-220 dimension *: typical inches millimeters inches a b e g i k m o p 3 2 1 c n h d 4 style: pin 1.base 2.collector 3.emitter 4.collector 3-lead to-220 plastic package cystek package code: e3 marking: 1101 millimeters dim min. max. min. max. dim min. max. min. max. a 0.2197 0.2949 5.58 7.49 i - * 0.1508 - * 3.83 b 0.3299 0.3504 8.38 8.90 k 0.0295 0.0374 0.75 0.95 c 0.1732 0.185 4.40 4.70 m 0.0449 0.0551 1.14 1.40 d 0.0453 0.0547 1.15 1.39 n - * 0.1000 - * 2.54 e 0.0138 0.0236 0.35 0.60 o 0.5000 0.5618 12.70 14.27 g 0.3803 0.4047 9.66 10.28 p 0.5701 0.6248 14.48 15.87 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: 42 alloy ; solder plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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