features ? ideal for electron detection ? large detection area ? 100% internal qe electro-optical characteristics at 25c parameters test conditions min typ max units active area responsivity, r shunt resistance, rsh reverse breakdown voltage, v r capacitance, c rise time thermal parameters storage and operating temperature range ambient 2 nitrogen or vacuum maximum junction temperature lead soldering temperature 1 -10 to 40c 2 -20c to 80c 70c 260c 1 0.08" from case for 10 seconds. 2 temperatures exceeding these parameters may create oxide growth on the active area. over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. shipped with temporary cover to protect photodiode and wire bond. review opto diode handling precautions for ird detectors prior to removing cover. dimensions are in inch [metric] units. 10mm x 10mm @ 254nm, v r = 0v v b = 10mv i r = 1a v r = 0v v r = 0v, r l = 50? 0.07 20 100 0.08 10 10 0.09 44 10 mm 2 a/w m-ohm volts nf usec electron detection 100 mm 2 AXUV100G revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
electron detection 100 mm 2 AXUV100G 0.5 0.3 0.2 0.1 0.4 0.0 200 300 400 500 600 700 800 900 1000 1100 responsivity (a/w) uv-vis-nir photon responsivity wavelength (nm) wavelength (nm) 0.30 0.20 0.10 0.05 0.15 0.25 0.00 0 150 100 50 200 250 responsivity (a/w) euv-uv photon response energy (ev) 0.30 0.20 0.10 0.05 0.15 0.25 0.00 100 1000 10,000 100,000 responsivity (a/w) electron response revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
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