photodiode 100 mm 2 AXUV100AL features square active area 150 nm aluminum filter across top surface detection range 17-80 nm protective cover plate electro-optical characteristics at 25c parameters test conditions min typ max units active area responsivity, r shunt resistance, rsh reverse breakdown voltage, v r capacitance, c response time, tr thermal parameters storage and operating temperature range ambient nitrogen or vacuum maximum junction temperature lead soldering temperature 1 -10 to 40c -20c to 80c 70c 260c 1 0.08" from case for 10 seconds dimensions are in inch [metric] units. 10 mm x 10 mm (see graph on next page) @ 10 mv i r = 1 a v r = 0 v rl = 50 , v r = v 20 100 10 10 250 44 mm 2 mohms volts nf nsec revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
photodiode 100 mm 2 AXUV100AL 0.30 0.20 0.10 0.05 0.15 0.25 0.00 responsivity (a/w) responsivity (a/w) 1 0 20 40 60 80 90 120 140 wavelength(nm) revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
|
