0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SA1815 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -3 v collector current i c -50 ma collector dissipation p c 250 mw jumction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb = -12v , i e =0 -0.1 a emitter cutoff current i ebo v eb =-2v,i c =0 -0.1 a dc current gain h fe v ce = -10v , i c = -5ma 60 270 gain bandwidth product ft v ce = -10v , i c = -5ma 750 mhz output capacitance c ob v cb =-10v,f=1mhz 1.2 1.6 pf reverse transfer capacitance cob v cb =-10v,f=1mhz 0.9 pf c-e saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.1 -0.3 v power gain p g v ce =-10v,i c =-10ma,f=100mhz 25 db h fe classification marking rank 3 4 5 hfe 60 to 120 90 to 180 135 to 270 js features high power gain:pg=25db typ(f=100mhz) high cutoffrequency:ft=750mhz typ low collector-to-emitter saturation voltage sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors product specification 4008-318-123
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