r07ds0724ej0100 rev.1.00 page 1 of 5 mar 30, 2012 data sheet N0501R pnp silicon epitaxial transistor features ? complements to n0501s. ? v ceo = ? 50 v ? i c(dc) = ? 1.0 a ? miniature package sot- 23f (2sb1115: package variation of 3ppomm) product lineup part number packing package name package code mass [typ.] N0501R-t1-at tape 3000p/reel sot-23f pvsf0003za-a 0.0126g absolute maximum ratings (t a = 25 ? c) parameter symbol ratings unit collector to base voltage v cbo ? 60 v collector to emitter voltage v ceo ? 50 v emitter to base voltage v ebo ? 6 v collector current (dc) i c(dc) ? 1.0 a collector current (pulse) * 1 i c(pulse) ? 2.0 a total power dissipation p t1 0.2 w total power dissipation * 2 p t2 1.0 w junction temperature t j 150 ?c storage temperature t stg ? 55 to ? 150 ?c note * 1. pw ? 10 ms, duty cycle ? 50% * 2. fr-4 board size 2500 mm 2 ? 1.6 mm, t ? 5 sec electrical characteristics (t a = 25 ?c) parameter symbol conditio n min. typ. max. unit collector cutoff current i cbo v cb = ? 60 v, i e = 0 ? 100 na emitter cutoff current i ebo v eb = ? 6.0 v, i c = 0 ? 100 na dc current gain h fe1 * 1 v ce = ? 2.0 v, i c = ? 100 ma 135 340 600 dc current gain h fe2 * 1 v ce = ? 2.0 v, i c = ? 1.0 a 100 200 collector saturation voltage v ce(sat) * 1 i c = ? 1.0 a, i b = ? 50 ma ? 0.2 ? 0.3 v base saturation voltage v be(sat) * 1 i c = ? 1.0a, i b = ? 50 ma ? 0.90 ? 1.2 v base to emitter voltage v be * 1 v ce = ? 2.0 v, i c = ? 50 ma ? 600 ? 700 mv gain bandwidth product f t v ce = ? 2.0 v, i e = 100 ma 110 mhz output capacitance c ob v cb = ? 10 v, i e = 0, f = 1.0 mhz 28 pf note * 1. pulsed h fe classification marking ym yl yk hfe1 135 to 270 200 to 400 300 to 600 r07ds0724ej0100 rev.1.00 mar 30, 2012
N0501R r07ds0724ej0100 rev.1.00 page 2 of 5 mar 30, 2012 typical characteristics (t a = 25 ?c) derating factor forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 t a - ambient temperature - ?c 0 20 40 60 80 100 120 140 160 safe operating area ?0.01 ?0.1 ?1 ?10 i c - collector current - (a) ?100 ?10 ?0.1 ?1 1 ms 10 ms 100 ms v ce - collector to emitter voltage - (v) i c - collector current - (a) collector current vs. collector to emitter voltage ?0.01 ?0.02 ?0.03 ?0.04 0 0 ?2 ?4 ?6 ?8 ?10 v ce - collector to emitter voltage - (v) v ce - collector to emitter voltage - (v) collector current vs. collector to emitter voltage i c - collector current - (a) 0 ?0.2 ?0.4 ?0.6 ?0.8 ?1 0 ?0.4 ?1.6 ?1.2 ?0.8 ?2 i b = ?10 a ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?100 h fe - dc current gain i c - collector current - (a) 10 100 1000 ?0.001 ?0.01 ?0.1 ?1 ?10 v ce = ?2 v pulsed 125?c 25?c ?25?c dc current gain vs. collector current collector and base saturation voltage vs. collector current v ce(sat) - collector saturation voltage - (v) v be(sat) - base saturation voltage - (v) ?0.01 ?0.1 ?1 ?10 ?0.001 ?0.01 ?0.1 ?1 ?10 v be(sat) v ce(sat) i c = 10?i b pulsed i c - collector current - (a) t a = 25?c single pulse ?2.0 ?1.0 ?1.5 ?3.0 i b = ?0.5 ma ?4.0 ?2.5 ?3.5 ?4.5 ?5.0
N0501R r07ds0724ej0100 rev.1.00 page 3 of 5 mar 30, 2012 collector current vs. base to emitter voltage i c - collector current - (a) ?0.0001 ?0.001 ?0.01 ?0.1 ?1 ?10 t a = 125?c 25?c ?25?c v be - base to emitter voltage - (v) 0.0 ?0.3 ?0.6 ?0.9 ?1.2 v ce = ?6 v pulsed gain bandwidth product vs. collector current f t - gain bandwidth product - (mhz) 10 100 1000 v ce = ?2 v ?1000 ?100 ?10 ?1 i c - collector current - (ma) c ob - output capacitance - (pf) output capacitance vs. collector to base voltage 1 10 100 ?100 ?10 ?1 ?0.1 v cb - collector to base voltage - (v) i e = 0 f = 1.0 mhz switching time vs. collector current t sw - switching time - (ns) 10 100 10000 1000 i c - collector current - (ma) ?10 ?100 ?1000 ?10000 v ce = ?10 v i c = 20i b1 = ?20i b2 p w = 50 s t on t f t stg
N0501R r07ds0724ej0100 rev.1.00 page 4 of 5 mar 30, 2012 package drawing (unit: mm) 1: emitter 2: base 3: collector 2 1 3
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