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www.irf.com 1 11/17/05 IRF6626 directfet power mosfet description the IRF6626 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a micro-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection sol dering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and s witching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors operating at higher frequencies. the IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including rds(on) and gate charge to minimize losses in the control fet socke t. applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage

fig 2. typical on-resistance vs. gate voltage rohs compliant containing no lead or bromide low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for cpu core dc-dc converters optimized for both sync. fet and some control fet applications low conduction and switching losses compatible with existing surface mount techniques click on this section to link to the appropriate technical paper. click on this section to link to the directfet mosfets repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.29mh, r g = 25 ? , i as = 13a. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. 0 102030 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 13a directfet isometric sq sx st mq mx mt absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 13 max. 13 72 130 20 30 16 24 q g tot q gd q gs2 q rr q oss v gs(th) 19nc 6.7nc 1.6nc 5.4nc 13nc 1.8v 3 4 5 6 7 8 v gs, gate -to -source voltage (v) 0 5 10 15 t y p i c a l r d s ( o n ) ( m ? ) i d = 16a t j = 25c t j = 125c v dss v gs r ds(on) r ds(on) 30v max 20v max 4.0m ? @ 10v 5.2m ? @ 4.5v
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 23 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 4.0 5.4 m ? ??? 5.2 7.1 v gs(th) gate threshold voltage 1.35 ??? 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -6.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 64 ??? ??? s q g total gate charge ??? 19 29 q gs1 pre-vth gate-to-source charge ??? 5.2 ??? q gs2 post-vth gate-to-source charge ??? 1.6 ??? nc q gd gate-to-drain charge ??? 6.7 q godr gate charge overdrive ??? 5.5 ??? see fig. 17 q sw switch charge (q gs2 + q gd ) ??? 8.3 ??? q oss output charge ??? 13 ??? nc r g gate resistance ??? ??? 1.5 ? t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 15 ??? t d(off) turn-off delay time ??? 17 ??? ns t f fall time ??? 4.5 ??? c iss input capacitance ??? 2380 ??? c oss output capacitance ??? 530 ??? pf c rss reverse transfer capacitance ??? 260 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 52 (body diode) a i sm pulsed source current ??? ??? 130 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 15 23 ns q rr reverse recovery charge ??? 5.4 8.1 nc v ds = 24v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 4.5v i d = 13a v gs = 0v v ds = 15v i d = 13a t j = 25c, i f = 13a di/dt = 100a/s
t j = 25c, i s = 13a, v gs = 0v
showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 16a
v gs = 4.5v, i d = 13a
v ds = v gs , i d = 250a v ds = 24v, v gs = 0v mosfet symbol clamped inductive load v ds = 15v, i d = 13a conditions ? = 1.0mhz v ds = 16v, v gs = 0v v dd = 16v, v gs = 4.5v
v ds = 15v
www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient surface mounted on 1 in. square cu board, steady state. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermocouple incontact with top (drain) of part. r is measured at
surface mounted on 1 in. square cu board (still air). mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 58 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 0.017 270 -40 to + 150 max. 42 2.2 1.4 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 0.6677 0.000066 1.0463 0.000896 1.5612 0.004386 29.2822 0.686180 25.4550 32 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri 4 4 r 4 r 4 a 5 5 r 5 r 5
4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 16a v gs = 10 vgs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 i d , drain current (a) 0 5 10 15 20 25 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.0v vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width
www.irf.com 5 fig 13. threshold voltage vs. temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = 40c v gs = 0v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.6a 8.4a bottom 13a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i d , d r a i n c u r r e n t ( a ) 0.01 0.10 1.00 10.00 100.00 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) ta = 25c tj = 150c single pulse 100sec 1msec 10msec
6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit fig 15b. gate charge waveform fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
www.irf.com 7 directfet substrate and pcb layout, st outline (small size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. fig 18. ! "# !
for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period $
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g = gate d = drain s = source d d d d g s s
8 www.irf.com directfet outline dimension, st outline (small size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet part marking code a b c d e f g h j k l m n p imperial min 4.75 3.70 2.75 0.35 0.58 0.58 0.75 0.53 0.26 0.88 2.18 0.59 0.03 0.08 max 4.85 3.95 2.85 0.45 0.62 0.62 0.79 0.57 0.30 0.98 2.28 0.70 0.08 0.17 min 0.187 0.146 0.108 0.014 0.023 0.023 0.030 0.021 0.010 0.035 0.086 0.023 0.001 0.003 metric dimensions max 0.191 0.156 0.112 0.018 0.024 0.024 0.031 0.022 0.012 0.039 0.090 0.028 0.003 0.007
www.irf.com 9 directfet tape & reel dimension (showing component orientation). data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/05 reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6626). for 1000 parts on 7" reel, order IRF6626tr1 standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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