description the 2SJ557 is a switching device which can be driven directly by a 4 v power source. the 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features can be driven by a 4 v power source low on-state resistance r ds(on)1 = 155 m w max. (v gs = C10 v, i d = C1.0 a) r ds(on)2 = 255 m w max. (v gs = C4.5 v, i d = C1.0 a) r ds(on)3 = 290 m w max. (v gs = C4.0 v, i d = C1.0 a) ordering information part number package 2SJ557 3-pin mini mold (thin type) absolute maximum ratings (t a = 25c) drain to source voltage v dss C30 v gate to source voltage v gss C20 / +5 v drain current (dc) i d(dc) 2.5 a drain current (pulse) note1 i d(pulse) 10 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 1.25 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. mounted on fr4 board, t 5 sec. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 C0.06 2.8 0.2 1.5 0.95 1 2 3 1.9 2.9 0.2 0.4 +0.1 C0.05 0.95 0.65 +0.1 C0.15 1 : gate 2 : source 3 : drain equivalent circuit source body diode gate protection diode marking: xb gate drain 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 2SJ557 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain cut-off current i dss v ds = C30 v, v gs = 0 v C10 m a gate leakage current i gss v gs = 16 v, v ds = 0 v 10 m a gate cut-off voltage v gs(off) v ds = C10 v, i d = C1 ma C1.0 C1.7 C2.5 v forward transfer admittance | y fs |v ds = C10 v, i d = C1.5 a12.5s drain to source on-state resistance r ds(on)1 v gs = C10 v, i d = C1.0 a 114 155 m w r ds(on)2 v gs = C4.5 v, i d = C1.0 a 178 255 m w r ds(on)3 v gs = C4.0 v, i d = C1.0 a 212 290 m w input capacitance c iss v ds = C10 v 312 pf output capacitance c oss v gs = 0 v 117 pf reverse transfer capacitance c rss f = 1 mhz 56 pf turn-on delay time t d(on) v dd = C10 v12ns rise time t r i d = C1.0 a7ns turn-off delay time t d(off) v gs(on) = C10 v 133 ns fall time t f r g = 10 w 85 ns total gate charge q g v dd = C10 v2.8nc gate to source charge q gs i d = C2.5 a1.0nc gate to drain charge q gd v gs = C4.0 v1.2nc diode forward voltage v f(s-d) i f = 2.5 a, v gs = 0 v0.84v reverse recovery time t rr i f = 2.5 a, v gs = 0 v28ns reverse recovery charge q rr di/dt = 50 a / m s7.8nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 w i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma 2SJ557 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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