tpsmp6.8 thru tpsmp43a www.vishay.com vishay general semiconductor revision: 08-oct-12 1 document number: 88471 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power density surface mount par ? transient voltage suppressors typical applications protection for ics, drive transi stors, signal lines of sensor units, and electronic units in consumer, computer, industrial and automotive applications. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automotive requirement ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? uni-direction only ? excellent clamping capability ? low incremental surge resistance ? very fast response time ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 mechanical data case: do-220aa (smp) molding compound meets ul 94 v-0 flammability rating base p/nhm3 - halogen-fr ee, rohs-compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on pcb with 5.0 mm x 5.0 mm co pper pads attached to each terminal (3) pulse test: 300 s pulse width, 1 % duty cycle primary characteristics v br 6.8 v to 43 v p ppm (for v br 6.8 v) 250 w p ppm (for v br 7.5 v to 12 v) 300 w p ppm (for v br 13 v to 43 v) 400 w v wm 5.5 v to 36.8 v p d 2.5 w i fsm 40 a t j max. 185 c polarity uni-directional package do-220aa (smp) do-220aa ( s mp) e s mp ? s eries maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol value unit peak power dissipa tion with a 10/1000 s wa veform (fig. 1 and 3) (1)(2) p ppm see table next page w peak power pulse current with a 10/1000 s wavefo rm (fig. 1) (1) i ppm see table next page a power dissipation on infinite heatsink, t a = 75 c p d 2.5 w peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 40 a maximum instantaneous forward voltage at 25 a (3) v f 2.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
tpsmp6.8 thru tpsmp43a www.vishay.com vishay general semiconductor revision: 08-oct-12 2 document number: 88471 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) v br measured after i t applied for 300 s, i t = square wave pu lse or equivalent (2) surge current waveform per fi g. 3 and derated per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 electrical characteristics (t a = 25 c, unless otherwise noted) device type device marking code breakdown voltage v br (1) at i t (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i r (a) maximum reverse leakage at v wm t j = 150 c i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max. tpsmp6.8 adp 6.12 7.48 10.0 5.50 300 1000 23.2 10.8 0.057 tpsmp6.8a aep 6.45 7.14 10.0 5.80 300 1000 23.8 10.5 0.057 tpsmp7.5 afp 6.75 8.25 10.0 6.05 150 500 25.6 11.7 0.060 tpsmp7.5a agp 7.13 7.88 10.0 6.40 150 500 26.5 11.3 0.061 tpsmp8.2 ahp 7.38 9.02 10.0 6.63 50.0 200 24.0 12.5 0.065 tpsmp8.2a akp 7.79 8.61 10.0 7.02 50.0 200 24.8 12.1 0.065 tpsmp9.1 alp 8.19 10.0 1.0 7.37 10.0 50.0 21.7 13.8 0.068 tpsmp9.1a amp 8.65 9.55 1.0 7.78 10.0 50.0 22.4 13.4 0.068 tpsmp10 anp 9.00 11.0 1.0 8.10 5.0 20.0 20.0 15.0 0.073 tpsmp10a app 9.50 10.5 1.0 8.55 5.0 20.0 20.7 14.5 0.073 tpsmp11 aqp 9.90 12.1 1.0 8.92 2.0 10.0 18.5 16.2 0.075 tpsmp11a arp 10.5 11.6 1.0 9.40 2.0 10.0 19.2 15.6 0.075 tpsmp12 asp 10.8 13.2 1.0 9.72 1.0 5.0 17.3 17.3 0.076 tpsmp12a atp 11.4 12.6 1.0 10.2 1.0 5.0 18.0 16.7 0.078 tpsmp13 aup 11.7 14.3 1.0 10.5 1.0 5.0 21.1 19.0 0.081 tpsmp13a avp 12.4 13.7 1.0 11.1 1.0 5.0 22.0 18.2 0.081 tpsmp15 awp 13.5 16.3 1.0 12.1 1.0 5.0 18.2 22.0 0.084 tpsmp15a axp 14.3 15.8 1.0 12.8 1.0 5.0 18.9 21.2 0.084 tpsmp16 ayp 14.4 17.6 1.0 12.9 1.0 5.0 17.0 23.5 0.086 tpsmp16a azp 15.2 16.8 1.0 13.6 1.0 5.0 17.8 22.5 0.086 tpsmp18 bdp 16.2 19.8 1.0 14.5 1.0 5.0 15.1 26.5 0.088 tpsmp18a bep 17.1 18.9 1.0 15.3 1.0 5.0 15.9 25.5 0.088 tpsmp20 bfp 18.0 22.0 1.0 16.2 1.0 5.0 13.7 29.1 0.090 tpsmp20a bgp 19.0 21.0 1.0 17.1 1.0 5.0 14.4 27.7 0.090 tpsmp22 bhp 19.8 24.2 1.0 17.8 1.0 5.0 12.5 31.9 0.092 tpsmp22a bkp 20.9 23.1 1.0 18.8 1.0 5.0 13.1 30.6 0.092 tpsmp24 blp 21.6 26.4 1.0 19.4 1.0 5.0 11.5 34.7 0.094 tpsmp24a bmp 22.8 25.2 1.0 20.5 1.0 5.0 12.0 33.2 0.094 tpsmp27 bnp 24.3 29.7 1.0 21.8 1.0 5.0 10.2 39.1 0.100 tpsmp27a bpp 25.7 28.4 1.0 23.1 1.0 5.0 10.7 37.5 0.096 tpsmp30 bqp 27.0 33.0 1.0 24.3 1.0 5.0 9.2 43.5 0.097 tpsmp30a brp 28.5 31.5 1.0 25.6 1.0 5.0 9.7 41.4 0.097 tpsmp33 bsp 29.7 36.3 1.0 26.8 1.0 5.0 8.4 47.7 0.098 tpsmp33a btp 31.4 34.7 1.0 28.2 1.0 5.0 8.8 45.7 0.098 tpsmp36 bup 32.4 39.6 1.0 29.1 1.0 5.0 7.7 52.0 0.099 tpsmp36a bvp 34.2 37.8 1.0 30.8 1.0 5.0 8.0 49.9 0.099 tpsmp39 bwp 35.1 42.9 1.0 31.6 1.0 5.0 7.1 56.4 0.100 tpsmp39a bxp 37.1 41.0 1.0 33.3 1.0 5.0 7.4 53.9 0.100 tpsmp43 byp 38.7 47.3 1.0 34.8 1.0 5.0 6.5 61.9 0.101 tpsmp43a bzp 40.9 45.2 1.0 36.8 1.0 5.0 6.7 59.3 0.101
tpsmp6.8 thru tpsmp43a www.vishay.com vishay general semiconductor revision: 08-oct-12 3 document number: 88471 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) automotive grade ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse derating curve fig. 3 - pulse waveform fig. 4 - typical junction capacitance ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode tpsmp6.8ahm3/84a (1) 0.024 84a 3000 7" diameter plastic tape and reel tpsmp6.8ahm3/85a (1) 0.024 85a 10 000 13" diameter plastic tape and reel tpsmp13 thru tpsmp43a tpsmp7.5 thru tpsmp12a tpsmp6.8 t d - pulse width (s) 10 0.01 0.1 100 10 000 p ppm - peak pulse power (kw) 1 1000 10 0.1 1 t j - initial temperature (c) 100 0 0 150 200 peak pulse power (p pp ) of current (i pp ) derating in percentage (%) 25 175 50 50 75 25 125 100 75 t - time (ms) 150 0 04.0 i ppm - peak pulse current, % i rsm 1.0 2.0 100 50 3.0 t d t r = 10 s half value - i ppm i pp 2 10/1000 s waveform as defined by r.e.a. t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm peak value i ppm v wm - reverse stand-off voltage (v) 10 000 10 1100 c j - junction capacitance (pf) 10 1000 100 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p v r , measured at zero bias v r measured at stand-off voltage, v wm
tpsmp6.8 thru tpsmp43a www.vishay.com vishay general semiconductor revision: 08-oct-12 4 document number: 88471 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum peak forward surge current fig. 6 - steady state power derating curve package outline dimensions in inches (millimeters) number of cycles at 50 hz 40 0 1 100 peak forward surge current (a) 10 10 5 35 30 25 20 15 t a = t l , on infinite heatsink fr-4 pcb, on vishay minimum recommended pad layout t j - initial temperature (c) 3.0 0.0 0 150 200 p m(av) - steady state power dissipation (w) 25 175 50 2.0 2.5 0.5 125 100 75 1.5 1.0 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0.80) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref. 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode band 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.086 (2.18) 0.074 (1.88) 0.087 (2.20) 0.103 (2.60) do-220aa (smp)
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