this is information on a product in full production. january 2013 doc id 023873 rev 2 1/15 15 STN2580 high voltage fast switching npn power transistor datasheet ? production data features high voltage capability fast switching speed applications lighting switch mode power supply description this device is a high voltage fast-switching npn power transistor. it is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide rbsoa. the device is designed for use in lighting applications and low cost switch-mode power supplies. figure 1. internal schematic diagram 1 2 4 3 sot-223 table 1. device summary order codes marking package packaging STN2580 n2580 sot-223 tape and reel www.st.com
contents STN2580 2/15 doc id 023873 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STN2580 electrical ratings doc id 023873 rev 2 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 800 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 1 a i cm collector peak current (t p < 5 ms) 2 a i b base current 0.5 a p tot total dissipation at t amb = 25 c 1.6 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thja thermal resistance junction-ambient max (1) 1. when mounted on pcb area of 1cm 2 78 c/w
electrical characteristics STN2580 4/15 doc id 023873 rev 2 2 electrical characteristics t case = 25 c unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 800 v 10 a i ebo emitter cut-off current (i c = 0) v eb = 8 v 100 a v (br)ceo (1) 1. pulse test: pulse duration 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = 10 ma 400 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 9 v h fe (1) dc current gain i c = 250 ma v ce = 5 v 60 100 v ce(sat) (1) collector-emitter saturation voltage i c = 1 a i b = 0.2 a 1 v v be(sat) (1) base-emitter saturation voltage i c = 1 a i b = 0.2 a 1.1 v t r t s t f resistive load rise time storage time fall time v cc =200 v, i c =0.3 a i b1 =20 ma, i b2 =-50 ma t p =30 s 140 4 90 ns s ns
STN2580 electrical characteristics doc id 023873 rev 2 5/15 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. derating curve ! - v 4 ? # ? s m s m s ) c - a x 0 u l s e o p e r a t i o n
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