AO4566 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 12a r ds(on) (at v gs =10v) < 11m w r ds(on) (at v gs =4.5v) < 17m w application 100% uis tested 100% r g tested symbol v ds v ? latest trench power alphamos ( mos lv) technology ? very low r ds(on) at 4.5v v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al 30v v 20 gate-source voltage drain-source voltage 30 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted soic-8 top view bottom view d d d d s s s g g ds v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jl 100ns 36 v avalanche current c 15 a avalanche energy l=0.1mh c 11 mj units parameter typ max c/w r q ja 42 50 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 20 85 30 70 continuous drain current g a i d 12 9.4 48 t a =70c pulsed drain current c maximum junction-to-ambient a v 20 gate-source voltage t a =25c c thermal characteristics power dissipation b p d t a =25c w 2.5 1.6 t a =70c junction and storage temperature range -55 to 150 rev 0: aug 2012 www.aosmd.com page 1 of 5
AO4566 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 9 11 t j =125c 12.5 15 13.5 17 m w g fs 45 s v sd 0.72 1 v i s 3.5 a c iss 542 pf c oss 233 pf c rss 31 pf r g 1 2 3 w q g (10v) 9 12.2 nc q g (4.5v) 4.3 5.8 nc q gs 2.2 nc q gd 1.7 nc t d(on) 4 ns t r 3.5 ns t 18 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v v gs =10v, i d =12a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =12a v gs =4.5v, i d =10a forward transconductance diode forward voltage turn-on rise time turn-off delaytime maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, r l =1.25 w , r =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =12a gate source charge gate drain charge total gate charge t d(off) 18 ns t f 3 ns t rr 9.7 ns q rr 11.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =12a, di/dt=500a/ m s turn-off delaytime i f =12a, di/dt=500a/ m s turn-off fall time r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: aug 2012 www.aosmd.com page 2 of 5
AO4566 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 14 16 18 0 3 6 9 12 15 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =10a v gs =10v i d =12a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4.5v 6v 10v 3.5v 4v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =12a 25 c 125 c rev 0: aug 2012 www.aosmd.com page 3 of 5
AO4566 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =12a 1 10 100 1000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) 10 m s 10s 1ms dc r ds(on) @10v limited t j(max) =150 c t a =25 c 100 m s idm limited figure 9: maximum forward biased 10ms * v gs > minimum v gs at which r ds(on) is specified figure 10: single pulse power rating junction - to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =85 c/w rev 0: aug 2012 www.aosmd.com page 4 of 5
AO4566 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 0: aug 2012 www.aosmd.com page 5 of 5
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