creat by art - patented trench mos barrier schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability symbol unit v rrm v i rrm a e as mj dv/dt v/ s v ac v v br v i f = 5a i f = 10a i f = 5a i f = 10a t j = 25c a t j = 125c ma r jc o c/w t j o c t stg o c note 1: 2.0 s pulse width, f=1.0khz document number: ds_d1309047 version:b13 taiwan semiconductor TSF2080C non-repetitive avalanche energy at l=60mh, per diode 80 a polarity: as marked maximum ratings and electrical characteristics (t a =25 o c unless otherwise noted) features maximum repetitive peak reverse voltage note 3: mount on heatsink size of 4in x 6in x 0.25in al-plate 5 i r 0.77 t j = 25c dual high-voltage trench mo s barrier schottky rectifier 80 - - - - - - 55 to + 150 isolation voltage from terminal to heatsink t = 1 min - 55 to + 150 typical thermal resistance (note 3) instantaneous reverse current per diode at rated reverse voltage peak repetitive reverse surge current (note 1) 0.5 v f 1500 voltage rate of change (rated v r ) molding compound meets ul 94 v-0 flammability rating maximum average forward rectified current mechanical data mounting torque: 5 in-lbs. max. 110 note 2: pulse test with pulse width=300 s, 1% duty cycle operating junction temperature range storage temperature range - halogen-free according to iec 61249-2-21 definition 20 TSF2080C a 10 parameter per diode - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec per device case: ito-220ab min. 0.70 v f 0.67 terminal: matte tin plated leads, solderable per jesd 22-b102 weight: 1.7 grams i f(av) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 10000 100 t j = 125c 0.62 v - - i fsm typ. 0.52 breakdown voltage ( i r =1.0ma ) instantaneous forward voltage per diode ( note2 ) ito-220ab 600 -1020 -20 0.48 - max.
document number: ds_d1309047 version:b13 ordering information example ratings and characteristics curves TSF2080C taiwan semiconductor (t a =25 o c unless otherwise noted) part no. packing code package packing TSF2080C c0 ito-220ab 50 / tube preferred p/n part no. packing code description TSF2080C c0 TSF2080C c0 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c 10 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 with heatsink 4in x 6in x 0.25in al-plate fig.1 forward current derating curve average forward current (a) instantaneous forward current (a) capacitance (pf) instantaneous reverse current (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics case temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage.(%)
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code yww = date code f = factory code document number: ds_d1309047 version:b13 TSF2080C taiwan semiconductor dim. unit(mm) unit(inch) marking diagram
|
