creat by art - patented trench mos barrier schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability symbol unit v rrm v i rrm a e as mj dv/dt v/ s v ac v v br t j = 25c t j = 125c t j = 25c a t j = 100c ma r jc o c/w t j o c t stg o c note 1: 2.0 s pulse width, f=1.0 khz document number: ds_d1401020 version: c14 molding compound meets ul 94 v-0 flammability rating base p/n with suffix "g" on packing code - halogen-free, rohs compliant per diode v 100 a maximum average forward rectified current i f(av) 1500 voltage rate of change (rated v r ) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 60 dual hi g h-volta g e trench mos barrier schottk y rectifier taiwan semiconductor TSF10H100C non-repetitive avalanche energy at l=60mh, per diode 10000 features weight: 1.7g - halogen-free according to iec 61249-2-21 definition parameter i r 10 i fsm 5 min. typ. - - - - operating junction temperature range storage temperature range - 55 to +150 isolation voltage from terminal to heatsink t = 1 min - 55 to +150 typical thermal resistance (note 3) 4.3 v f breakdown voltage ( i r =1.0ma ) 100 note 3: mount on heatsink size of 4in x 6in x 0.25in al-plate TSF10H100C 120 a instantaneous reverse current per diode at rated reverse voltage instantaneous forward voltage per diode ( note2 ) - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec per device case: ito-220ab mechanical data mounting torque: 5 in-lbs. max. polarity: as marked terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test note 2: pulse test with pulse width=300 s, 1% duty cycle maximum repetitive peak reverse voltage peak repetitive reverse surge current (note 1) 0.5 i f = 5a maximum ratings and electrical characteristics (t a =25 o c unless otherwise noted) - max. - v ito-220ab 0.8 0.7 - - - - 100 6
part no. document number: ds_d1401020 version: c14 TSF10H100C c0g TSF10H100C c0 g green compound preferred p/n part no. packing code green compound code description TSF10H100C c0 TSF10H100C c0 tsh10h100c c0 suffix "g" ito-220ab 50 / tube example ordering information packing code green compound code package packing TSF10H100C taiwan semiconductor (t a =25 o c unless otherwise noted) ratings and characteristics curves 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c 10 100 1000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p capacitance (pf) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics instantaneous forward current (a) 0 2 4 6 8 10 12 0 255075100125150 with heatsink 4in x 6in x 0.25in al-plate fig.1 forward current derating curve average forward current (a) instantaneous reverse current (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics case temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage.(%)
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.45 - 0.057 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1401020 version: c14 TSF10H100C taiwan semiconductor dim. unit (mm) unit (inch) marking diagram
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