dual igbtmod? hvigbt module 150 amperes/4500 volts QID4515001 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 09/12 rev. 8 outline drawing and circuit diagram dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.89 48.0 d 4.880.01 124.00.25 e 2.240.01 57.00.25 f 1.18 30.0 g 0.43 11.0 h 1.07 27.15 j 0.20 5.0 k 1.65 42.0 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: ? low v ce(sat) ? creepage and clearance meet iec 60077-1 ? high isolation voltage ? rugged swsoa and rrsoa ? compact industry standard package applications: ? traction ? medium voltage drives ? high voltage power supplies dimensions inches millimeters l 0.690.01 17.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1.44 36.5 r 0.16 4.0 s m6 metric m6 t 0.63 min. 16.0 min. u 0.11 x 0.02 2.8 x 0.5 v 0.28 dia. 7.0 dia. 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) e b k (3typ) l (2typ) p u (5typ) t (screwing depth) q 5 4 1 2 3 4 5 6 7 8 f f d a c
QID4515001 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 09/12 rev. 8 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID4515001 units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (v ge = 0v) v ces 4500 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current, dc (t c = 91c) i c 150 amperes peak collector current (pulse) i cm 300* amperes diode forward current** i f 150 amperes diode forward surge current** (pulse) i fm 300* amperes i 2 t for diode (t = 10ms) i 2 t 10 ka 2 sec maximum collector dissipation (t c = 25c, igbt part, t j(max) 150c) p c 1440 watts mounting torque, m6 terminal screws 44 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 900 grams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 9.0 kvolts partial discharge q pd 10 pc (v1 = 4800 v rms , v2 = 3500 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 3200v, v ge = 15v, r g(off) 60?, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 2.7 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25c 3.5 3.9*** volts i c = 150a, v ge = 15v, t j = 125c 4.0 volts total gate charge q g v cc = 2250v, i c = 150a, v ge = 15v 1.4 c emitter-collector voltage** v ec i e = 150a, v ge = 0v 4.7 5.6 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *** pulse width and repetition rate should be such that device junction temperature rise is negligible.
QID4515001 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 09/12 rev. 8 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 18 nf output capacitance c oes v ge = 0v, v ce = 10v 1.33 nf reverse transfer capacitance c res 0.4 nf resistive turn-on delay time t d(on) v cc = 2250v, i c = 150a, 1.5 s load rise time t r v ge = 15v, 0.5 s switching turn-off delay time t d(off) r g = 60?, l s = 180nh 3.5 s times fall time t f inductive load 1.2 s turn-on switching energy e on t j = 125c, i c = 150a, v ge = 15v, 600 mj/p turn-off switching energy e off r g = 60?, v cc = 2250v, 450 mj/p l s = 180nh , inductive load diode reverse recovery time** t rr v cc = 2250v, i e = 150a, 1.8 s diode reverse recovery charge** q rr v ge = 15v, r g(on) = 60?, 81* c diode reverse recovery energy e rec l s = 180nh , inductive load 55 mj/p stray inductance (c1-e2) l sce 60 nh lead resistance terminal-chip r ce 0.8 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case*** r th(j-c) q per igbt 0.087 c/w thermal resistance, junction to case*** r th(j-c) d per fwdi 0.174 c/w contact thermal resistance, case to fin r th(c-f) per module, 0.018 c/w thermal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air (terminal to base) d a(t-b) 35.0 mm creepage distance along surface d s(t-b) 64 mm (terminal to base) clearance distance in air d a(t-t) 19 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measurement point is just under the chips.
QID4515001 dual igbtmod? hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 09/12 rev. 8 0 250 500 750 1000 1250 emitter current, i e , (amperes) free-wheel diode forward characteristics (typical) emitter-collector voltage, v ec , (volts) collector current, i c , (amperes) turn-off switching energy, e on , (mj/p) half-bridge turn-on switching energy characteristics (typical) 0 50 100 150 200 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 6 5 0 50 100 200 4 3 2 1 0 v ge = 15v t j = 25c t j = 125c 250 150 collector-emitter voltage, v ce , (volts) collector current, i c , (volts) turn-off switching safe operating area (rbsoa) (typical) 0 1000 2000 3000 4000 5000 350 250 0 1000 2000 3000 4000 5000 200 150 100 50 0 350 300 300 250 200 150 100 50 0 6 5 0 50 100 200 4 3 2 1 0 t j = 25c t j = 125c 250 150 v cc = 2250v v ge = 15v r g = 60 l s = 180nh t j = 125c inductive load integrated over range of 10% v cc 3000v v ge = 15v r g 60 l s = 100nh t j = 125c v cc 3000v di/dt 500a/ s t j = 125c 0 125 375 625 750 collector current, i c , (amperes) turn-off switching energy, e off , (mj/p) half-bridge turn-off switching energy characteristics (typical) 0 50 100 150 200 250 500 v cc = 2250v v ge = 15v r g = 60 l s = 180nh t j = 125c inductive load integrated over range of 10% 0 12.5 37.5 62.5 75.0 emitter current, i e , (amperes) reverse recovery energy, e rec , (mj/p) free-wheel diode reverse recovery characteristics (typical) 0 50 100 150 200 25.0 50.0 v cc = 2250v v ge = 15v r g = 60 l s = 180nh t j = 25c inductive load integrated over range of 10% igbt drive conditions collector-emitter voltage, v ce , (volts) diode reverse recovery safe operating area (typical) reverse recovery current, i rr , (amperes) time, (s) normalized transient thermal impedance, z t h ( j-c) transient thermal impedance characteristics (igbt) 1.2 10 -2 10 -3 10 -1 10 0 1.0 0.8 0.2 0.4 0.6 0 single pulse t c = 25c per unit base = r th( j-c) = 0.087 k/w z th = r th ? (normalized value) transient thermal impedance characteristics (fwdi) time, (s) 1.2 10 -2 10 -3 10 -1 10 0 1.0 0.8 0.2 0.4 0.6 0 single pulse t c = 25c per unit base = r th( j-c) = 0.174 k/w normalized transient thermal impedance, z t h ( j-c) z th = r th ? (normalized value)
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