shantou huashan electronic devices co.,ltd . applications medium power linear switching applications absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions i cbo collector cut-off current -100 a v cb =-60v, i e =0 i ebo emitter cut-off current -1 ma v eb =-5v, i c =0 *h fe 1 dc current gain 40 250 v ce =-2v, i c =-150ma *h fe 2 dc current gain 15 v ce =-2v, i c =1a *v ce(sat) collector- emitter saturation voltage -0.8 v i c =-1a, i b =-0.1a *v be(on) base-emitter on voltage -1.3 v v ce =-2v, i c =-1a v ceo(sus) collector-emitter sustaining voltage -60 v i c =-100ma, i b =0 f t current gain-bandwidth product 3 mhz v ce =-10v, i c =-250ma, *pulse test:pw=300s,duty cycle=1.5% pulsed h fe(3) classification cassification 6 10 16 h fe(3) 40~100 63~160 100~250 pnp silicon transistor t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 30w v cbo collector-base voltage -60v v ceo collector-emitter voltage -60v v ebo emitter-base voltage -5v i c collector current pulse -7a i c collector current dc -3a HSBD178 1 D emitter, e 2 D collector c 3 D base b
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