2sc5355 2006-11-10 1 toshiba transistor silicon npn triple diffused mesa type 2sc5355 high voltage switching applications switching regulator applications dc-dc converter applications ? excellent switching times: t r = 0.5 s (max), t f = 0.3 s (max) ? high collector breakdown voltage: v ceo = 400 v ? high dc current gain: h fe = 20 (min) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v dc i c 5 collector current pulse i cp 7 a base current i b 1 a ta = 25c 1.5 collector power dissipation tc = 25c p c 25 w junction temperature t j 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita D toshiba 2-7b5a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7b7a weight: 0.36 g (typ.)
2sc5355 2006-11-10 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 480 v, i e = 0 D D 100 a emitter cut-off current i ebo v eb = 7 v, i c = 0 D D 10 a collector-base breakdown voltage v (br) cbo i c = 1 ma, i e = 0 600 D D v collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 400 D D v h fe (1) v ce = 5 v, i c = 1 ma 12 D D dc current gain h fe (2) v ce = 5 v, i c = 0.5 a 20 D 65 collector-emitter saturation voltage v ce (sat) i c = 2 a, i b = 0.25 a D D 1.0 v base-emitter saturation voltage v be (sat) i c = 2 a, i b = 0.25 a D D 1.3 v rise time t r D D 0.5 storage time t stg D D 2.0 switching time fall time t f i b1 = 0.25 a, i b2 = ? 0.5 a duty cycle 1% D D 0.3 s marking c5355 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) 20 s input i b1 i b2 output v cc 200 v i b1 i b2 100 ?
2sc5355 2006-11-10 3 common emitter v ce = 5 v 3 0.01 100 tc = 100c ? 40 25 10 0.1 1 10 collector current i c (a) collector-emitter saturation voltage v ce (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter voltage v ce (v) safe operating area 0 0 common emitter tc = 2 5 c 500 i b = 20 ma 5 4 3 2 1 2 4 6 8 10 400 300 200 100 50 0 0 5 4 3 2 1 common emitter v ce = 5 v 1.4 0.2 0.4 0.6 0.8 1.0 1.2 tc = 100c ? 40 25 0.01 2 10 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulse)* dc operation tc = 25c v ceo max 1 ms* 10 ms* 100 ms* 3 1 0.3 0.1 0.03 1000 100 10 100 s* 10 s* common emitter i c /i b = 5 30 ? 1000 0.01 10 tc = 100c ? 40 25 10 3 1 0.3 0.1 1
2sc5355 2006-11-10 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and relia bility of its products. neve rtheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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