ra45200 series silicon abrupt junction runing varactors 30 description fhe ma45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest q ~ossible. each- device in this series has a high density silicon dioxide passivation which results in exceptionally ow leakage currents and low post tuning drift. these silicon abrupt junction tuning varactors, which have a high q, also exhibit large capacitance changes with bias oltages. the capacitance change is approximately equal to the square root of the voltage. the ma45200 series diodes are available in a number of ceramic packages as well as in chip form. features u high 0 ? low leakage ? available in chip form ? available in ceramic packages ? custom designs available ? low post tuning drift ? frequency range vhf ku-band ? can be screened to tx, txv specifications applications the ma45200 series of silicon tuning diodes is ideally suited for frequency tuning applications through ku band. these devices are designed for use in solid state elec- tronic tuning of transistor, gunn and impatt oscillators.
u~ji uua,q..,imunn i uinog varaciors nominal characteristics minimum37 minimume total2,7 capacitance frequency availablel,7 model1 vb capacitance ratio minimum4 range case style number (volts) (pf) cto/ctvb 0 (ghz) (chip) ma45225 30 0.5 2.7 5500 10-12 132 ma45226 30 0.6 2.9 5500 9-11 132 ma45227 30 0.8 2.9 5000 8-10 132 ma45228 30 1.0 3.0 4800 7-9 132 ma45229 30 1.2 3.2 4800 6-8 132 ma45230 30 1.5 3.3 4500 6-8 132 ma45231 30 1.8 3.5 4000 5-7 132 ma45232 30 2.2 3.6 4000 5-7 132 ma45233 30 2.7 3.7 4000 4-6 132 ma45234 30 3.3 3.7 3500 4-6 132 MA45235 30 3.9 3.8 3500 3-5 132 ma45236 30 4.7 3.8 3000 2-4 132 ma45237 30 5.6 3.9 3000 2-4 132 ma45238 30 6.8 3.9 3000 2-4 132 ma45239 30 8.2 3.9 2700 1-2 132 ma45240 30 10.0 4.0 2500 1-2 132 ma45241 30 12.0 4.0 2200 .5-1.0 132 ma45242 30 15.0 4.0 2000 .5-1.0 132 45 volt silicon abrupt junction tuning varactors nominal characteristics minimum37 minimumo total2,? capacitance frequency available17 modell vb capacitance ratio minimum4 range case style number (volts) (pf) cto/ctvb 0 (ghz) (chip) ma45245 45 0.5 3.3 4000 9-11 132 ma45246 45 0.6 3.7 4000 8-10 132 ma45247 45 0.8 3.9 3800 5-7 132 ma45248 45 1.0 4.0 3500 5-7 132 ma45249 45 1.2 4.2 3500 4-6 132 ma45250 45 1.5 4.4 3300 4-6 132 ma45251 45 1.8 4.6 3000 3-5 132 ma45252 45 2.2 4.8 2700 3-5 132 ma45253 45 2.7 5.5 2700 2-3 132 ma45254 45 3.3 5.2 2400 2-3 132 ma45255 45 3.9 5.3 2200 1.5-2.5 132 ma45256 45 4.7 5.4 2000 1.0-1.5 132 ma45257 45 5.6 5.4 2000 1.0-1.5 132 ma45258 45 6.8 5.4 1800 1.0-1.5 132 ma45259 45 8.2 5.4 1700 1.0-1.5 132 notes 1. case style 30 is the standard enclosure for this series. on special order, 4. diode 0 at 4 volts is determined at 1.0 ghz and extrapolated to 50 mhz these devices are also available in other case styles including 31, 94, 96, by: 1 108, and in chip form. to order the ma45200 series in chip form or other 04 = 2nf cj..4 r5 case styles, add the designated available case number as a suffix to the model number, i.e., ma45229-132 is a chip or ma45229-96 is in the 96 case style. 5. reverse leakage current is measured at 800/0 of the minimum breakdown 2. total capacitance is measured at 1 mhz and 4 volts. the standard voltage and will be 20 nanoamperes maximum. capacitance is 10%. a tighter tolerance 5% may be obtained, at an 6. reverse leakage is 10 microamperes maximum at minimum breakdown additional cost, by adding the suffix a to the basic model number. voltage. 3. the total capacitance ratio will vary with different packages due to dif- 7. the total capacitance and capacitance ratios shown are for diodes housed ferences in package parasitic capacitance. in case style 30. other cases and chip styles will result in slightly different values. m/a-com, inc. u 43 south aye, burlington, ma 01803 u 800-366-2266 144
specifications @ ta = 250c (contd) 60 volt silicon abrupt junction tuning varactors ma45200 series silicon abrupt junction tuning varactors nominal characteristics minimum37 minimum6 total27 capacitance model vb capacitance ratio number (volts) (pf) cto/ctvb minimum4 a frequency available7 range case style (ghz) (chip) ma45260 60 0.6 4.5 ma45261 60 0.8 4.5 ma45262 60 1.0 4.8 ma45263 60 1.2 5.2 ma45264 60 1.5 5.6 2500 2300 2200 2000 1800 4-6 132 4-6 132 4-6 132 2-4 132 2-4 132 ma45265 60 1.8 5.9 ma45266 60 2.2 6.0 ma45267 60 2.7 6.2 ma45268 60 3.3 6.3 ma45269 60 3.9 6.4 1800 1700 1700 1600 1500 2-4 132 1.5-2.0 132 1.5-3.0 132 1.5-3.0 132 1.0-2.0 132 ma45270 60 4.7 6.5 ma45271 60 5.6 6.5 ma45272 60 6.8 6.5 ma45273 60 8.2 6.8 ma45274 60 10.0 7.0 1400 1400 1200 1200 1000 1.0-2.0 132 1.0-2.0 132 0.5-1.0 132 0.5-1.0 132 0.5-1.0 132 ma45275 60 12.0 7.0 ma45276 60 15.0 7.2 ma45277 60 18.0 7.2 ma45278 60 22.0 7.4 ma45279 60 27.0 7.4 ma45280 60 33.0 7.4 1000 900 900 800 800 700 0.5-1.0 131 0.25-0.50 131 0.25-0.50 131 0.25-0.50 131 0.10-0.25 131 0.10-0.25 131 90 volt silicon abrupt junction tuning varactors nominal characteristics minimum37 minimum6 total27 capacitance modell vb capacitance ratio number (volts) (pf) cto/ctvb minimum4 q frequency available7 range case style (gi-lz) (chip) ma45290 90 1.0 6.0 ma45291 90 1.2 6.5 ma45292 90 1.5 7.0 1500 1200 1100 2.0-4.0 132 2.0-4.0 132 2.0-4.0 132 ma45293 90 1.8 7.3 1000 2.0-4.0 132 ma45294 90 2.2 7.5 900 1.5-3.0 132 ma45295 90 2.7 7.8 900 1.5-3.0 132 ma45296 90 3.3 8.0 800 1.0-2.0 132 ma45297 90 3.9 8.3 800 1.0-2.0 132 ma45298 90 4.7 8.5 700 1.0-2.0 132 ma45299 90 5.6 8.8 600 0.5-1.0 132 see notes on previous page. maximum ratings environmental performance reverse voltage operating temperature storage temperature temperature coefficient power dissipation storage temperature (derate linearly to zero at 1 500c) same as rated breakdown vb ~650c to + 15000 ~650c to + 20000 300 ppm/00 at + - 4 volts ~650c to + 20000 <1.0 pf ? 100mw 1.0 pf ? 200mw all tuning varactors in the ma45200 series are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of mil-s-19500, mil-std-202 and mil-std-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products. high reliability parts all diodes in the ma45200 series may be screened to tx, txv specification.
31 108 m/a-com, inc. 146 u 94 43 south aye, burlington, ma 01803 96 132 u 30 131 800-366-2266
ma45200 series silicon abrupt junction tuning varactors typical performance curves i 11111 i 11111 1/n ~ .47 10 ~1 9 8 7 6 z u. x u. 1 100 5 4 ..~ fmax cmax fmin cmin -1ii-h - this curve does not take specific circuit considerations into - account and thus reflects only potential device performance reverse bias voltage (volts) figure 1. typical capacitance change ratios for silicon tuning varactor chips cmax/cmin figure 2. frequency tuning ratio as a function of capacitance change ratio c., 0. 0~ 0 2 4 6 8 10 12 14 16 reverse voltage (volts) figure 3. typical temperature coefficient of silicon varactors i- u 0 i- u i u 0 i- u ii~ i i 9 cp.15pf 8 = 0.7 volts 1/n= 46 6 hh-i-h 2 5 unpackagfr ip 4 ct.4 = 1.opf 2 = 0.5 pf 1-- 1 10 100 1 10 100 reverse bias voltage (volts) reverse bias voltage (volts) figure 4. typical capacitance change ratios for silicon figure 5. typical capacitance change ratios for silicon tuning varactors in case styles 30, 31 & 108 tuning varactors in case styles 94 and 96 10 9 8 7 6 5 4 3 2 u 0 u 2 1 2 3 45678910 10,000
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