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this is information on a product in full production. february 2013 doc id 024286 rev 1 1/14 14 STL11N4LLF5 n-channel 40 v, 9.1 m typ., 15 a stripfet?v power mosfet in a powerflat? 3.3 x 3.3 package datasheet ? production data features low gate charge very low on-resistance high avalance ruggedeness applications switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to a fom that is among the best in its class. figure 1. internal schematic diagram order code v ds r ds(on) max i d STL11N4LLF5 40 v 9.7 m 15 a powerflat? 3.3x3.3 table 1. device summary order code marking package packaging STL11N4LLF5 11n4llf5 powerflat? 3.3 x 3.3 tape and reel www.st.com
contents STL11N4LLF5 2/14 doc id 024286 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL11N4LLF5 electrical ratings doc id 024286 rev 1 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 40 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according rthj-pcb drain current (continuous) at t pcb = 25 c 11 a i d (1) drain current (continuous) at t pcb =100 c 6.8 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 44 a p tot (3) 3. the vaule is rated according rthj-c total dissipation at t c = 25 c 50 w p tot (1) total dissipation at t pcb = 25 c 2.9 w derating factor (3) 0.4 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2 , 2oz cu, t < 10sec thermal resistance junction-pcb 42.8 c/w r thj-pcb (2) 2. steady state thermal resistance junction-pcb 63.5 c/w
electrical characteristics STL11N4LLF5 4/14 doc id 024286 rev 1 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = 40 v, v ds = 40 v, t c =125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12.5v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 5.5 a v gs = 4.5 v, i d = 5.5 a 9.1 10.6 9.7 12 m m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 1570 257 32 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 11 a v gs =4.5 v (see figure 14) 12.9 3.9 5.3 nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv i d =0 0.5 1.5 2.5 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 5.5 a, r g =4.7 , v gs =4.5 v (see figure 13) - 14 42 37 5.2 - ns ns ns ns
STL11N4LLF5 electrical characteristics doc id 024286 rev 1 5/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 11 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 44 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd =11 a, v gs =0 -1.1v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =11 a, di/dt = 100 a/ s, v dd =20 v, tj=150 c (see figure 18) - 27.2 24.5 1.8 ns nc a
electrical characteristics STL11N4LLF5 6/14 doc id 024286 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y single pulse 0.05 0.02 0.01 =0.5 k 10 t p (s) -3 10 -2 10 -1 1 10 10 -3 10 -2 10 -1 10 -4 10 -4 am15489v1 , ' 9 '6 9 $ 9 9 9 9 *6 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y %9 '66 7 - ?& qrup , ' ?$ $0y 5 '6rq , ' $ 2kp 9 *6 9 $0y
STL11N4LLF5 electrical characteristics doc id 024286 rev 1 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics 9 *6 4 j q& 9 9 '' 9 , ' $ $0y & 9 '6 9 s) &lvv &rvv &uvv $0y 9 *6wk 7 - ?& qrup $0y 5 '6rq 7 - ?& qrup $0y 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& $0y
test circuits STL11N4LLF5 8/14 doc id 024286 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
STL11N4LLF5 package mechanical data doc id 024286 rev 1 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL11N4LLF5 10/14 doc id 024286 rev 1 table 8. powerflat? 3.3 x 3.3 mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0 0.05 a3 0.20 b 0.23 0.38 d 3.20 3.30 3.40 d2 2.50 2.75 e 3.20 3.30 3.40 e2 1.25 1.50 e0.65 l 0.30 0.50
STL11N4LLF5 package mechanical data doc id 024286 rev 1 11/14 figure 19. powerflat? 3.3 x 3.3 drawing 7635509_g
package mechanical data STL11N4LLF5 12/14 doc id 024286 rev 1 figure 20. powerflat? 3.3 x 3.3 recommended footprint 2.75 0.40 0.31 0.65 3.35 1.47 0.41 0.66 0.67 0.55 7635509_g_footprint
STL11N4LLF5 revision history doc id 024286 rev 1 13/14 5 revision history table 9. document revision history date revision changes 19-feb-2013 1 first release
STL11N4LLF5 14/14 doc id 024286 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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