bas85 vishay semiconductors formerly general semiconductor document number 88131 www.vishay.com 10-may-02 1 schottky diode maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit continuous reverse voltage v r 30 v forward continuous current at t amb = 25 ci f 200 (1) ma peak forward current at t amb = 25 ci fm 300 (1) ma surge forward current at t p < 1s, t amb = 25 ci fsm 600 (1) ma power dissipation at t amb = 65 cp tot 200 (1) mw thermal resistance junction to ambient air r ja 430 (1) c/w junction temperature t j 125 c storage temperature range t s 55 to +150 c features for general purpose applications this diode features low turn-on voltage. the devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. this diode is also available in a do-35 case with type designation bat85. mechanical data case: minimelf glass case (sod-80c) weight: approx. 0.05g cathode band color: green packaging codes/options: d1/10k per 13 reel (8mm tape), 20k/box d2/2.5k per 7 reel (8mm tape), 20k/box electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit reverse breakdown voltage v (br)r i r = 10 a (pulsed) 30 v leakage current i r v r = 25v 0.2 2 a pulse test tp < 300 s i f = 0.1ma 0.24 forward voltage v f i f = 1ma 0.32 v i f = 10ma 0.4 i f = 30ma 0.5 i f = 100ma 0.8 capacitance c tot v r = 1v, f = 1mhz 10 pf reverse recovery time t rr i f = 10ma, i r = 10ma 5ns i r =1ma note: (1) valid provided that electrodes are kept at ambient temperature. .146 (3.7) .019 (0.48) cathode band .130 (3.3) .051 (1.3) .011 (0.28) .063 (1.6) dia. minimelf (sod-80c) dimensions in inches and (millimeters)
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