advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v low on-resistance r ds(on) 9m fast switching characteristic i d -14a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor -50 halogen-free product thermal data parameter drain-source voltage gate-source voltage continuous drain current 3 0.02 storage temperature range continuous drain current 3 -8.9 pulsed drain current 1 200909172 1 AP6679GM-HF rating -30 + 25 -14 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s free datasheet http:///
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-14a - - 9 m ? v gs =-4.5v, i d =-11a - - 13 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-14a - 26 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs = + 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-14a - 37 60 nc q gs gate-source charge v ds =-24v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 25 - nc t d(on) turn-on delay time 2 v ds =-15v - 13 - ns t r rise time i d =-1a - 11 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 58 - ns t f fall time r d =15 -43- ns c iss input capacitance v gs =0v - 3180 4580 pf c oss output capacitance v ds =-25v - 780 - pf c rss reverse transfer capacitance f=1.0mhz - 480 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-14a, v gs =0 v , - 48 - ns q rr reverse recovery charge di/dt=100a/s - 46 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6679GM-HF free datasheet http:///
AP6679GM-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 40 80 120 160 200 240 280 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v 0 50 100 150 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -5.0v -4.5v v g = -3.0 v t a = 150 o c 6 8 10 12 14 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -11 a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -14 a v g =-10v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c free datasheet http:///
AP6679GM-HF fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 7. maximum safe operating area fig 8. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 14 a v ds = -24v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) free datasheet http:///
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