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fast starting , 20,000/s ec vibration rejecting rate gyro data sheet adxrs649 rev. b document feedback information furnished by analog devi ces is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without n otice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u. s.a. tel: 781.329.4700 ? 2010 C 2012 analog devices, inc. all rights reserved. technical support www.analo g.com features high vibration rejection over wide frequency ultra fast start up: 3 ms measurement range extendable to 50,000/s ec 10, 000 g powered shock survivability ratiometric to referenced supply 5 v single - supply operation z - axis (yaw rate) response ? 40c t o + 10 5c operation self - test on digital command ultrasmall and light (<0.15 cc, <0.5 gram) temperature sensor output rohs compliant applications sports e quipment industrial applications platform stabilization high s peed t achometry general description the adxrs649 is a complete angular rate sensor (gyroscope) that uses the analog devices, inc . , patented high volume bimos surface - micromachining process to make a complete gyro on one chip. an advanced, differential, quad sensor design rejects the influence of linear acceleration, enabling the adxrs649 to offer rate sensing in harsh environments where shock and vibration are present. the output signal, rateout (b 1, a 2 ), is a voltage proportional to the angular rate about the axis normal to the top surface of t he package. the output is ratiometric with respect to a pro vided reference supply. an external capacitor is used to set the band - width . the m easurement range is extend able to 50,000/s ec by adding an external resistor . low power consumption (3.5 ma) ena bles very low power consumption, and ultra fast start up ( 3 ms ) allow s for quick power cycling of the gyro. a t 10 samples per second , a pair of cr 2032 coin cells can power the adxrs649 for three months. a temperature output is provided for compensation tech niques. two digital self - test inputs electromechanically excite the sensor to test proper operation of both the sensor and the signal cond i - tioning circuits. the adxrs649 is available in a 7 mm 7 mm 3 mm c bga chip scale package . functional block dia gr am v dd agnd pgnd av cc st2 st1 temp v ratio cp1 cp2 cp3 cp4 cp5 sumj rateout demod r out 180k ? 1% 22nf 2.2 nf 22nf 100nf 100nf 100nf drive amp mechanical sensor charge pump and voltage regulator c out 5v 5v 5v (adc ref) ac amp vga 25 k ? at 25 c adxrs649 25k ? self - test 09573-001 figure 1.
adxrs649 dat a sheet rev. b | page 2 of 12 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 general description ......................................................................... 1 functional block diagram .............................................................. 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 absolute maximum ratings ............................................................ 4 rate sensitive axis ....................................................................... 4 esd caution .................................................................................. 4 pin configuration and function descriptions ............................. 5 typical performance characteristics ..............................................6 theory of operation .........................................................................9 setting the bandwidth ..................................................................9 temperature output and cali bration ...................................... 10 modifying the measurement range ........................................ 10 null bias adjustment ................................................................. 10 self - test function ...................................................................... 10 continuous self - te st .................................................................. 10 outline dimensions ....................................................................... 11 ordering guide .......................................................................... 11 revision history 10 /12 rev. a to rev. b changes t o figure 1 .......................................................................... 1 changed sensor resonant frequency min imum parameter from 16 khz to 15.5 khz ................................................................. 1 changed sensor resonant frequency typical parameter f rom 18 khz to 17.5 khz ........................................................................... 3 3/11 rev. 0 to rev. a changes t o ordering guide .......................................................... 1 1 12/10 revision 0 : initial version
data sheet adxrs649 rev. b | page 3 of 12 specifications all minimum and maximum specifications are guaranteed. typical specifications are not guaranteed. t a = ?40c to +10 5c , v s = av cc = v dd = v ratio = 5 v, angular rate = 0/sec, bandwidth = 80 hz (c out = 0.01 f), i out = 100 a, 1 g , unless otherwise noted. table 1 . parameter test conditions /comments min typ max unit sensitivity 1 clockwise rotation is positive output measurement range 2 full - scale range over specifications range 20,0 00 /sec initial and o ver temperature ?40c to + 105c 0.08 0.1 0.12 mv//sec temperature drift 3 2 % nonlinearity best fit straight line 0.1 % of fs null bias 1 null bias ?40c to +10 5c 2.4 2.5 2.6 v linear acceleration effect any axis 0.1 /sec/ g vibration rectification 40 g rms , 50 hz to 27 khz 0.00 06 /s ec / g 2 noise performance rate noise density t a = 25c 0. 25 /sec/ hz t a = 105c 0.4 /sec/ hz resolution floor t a = 25c , 1 minute to 1 hour in - run 2 0 0 /hr frequency response bandwidth 4 3 db user adjustable up to specification 2000 hz sensor resonant frequency 15.5 17.5 20 khz self - test 1 st1 rateout response st1 pin from logic 0 to logic 1 ? 1300 /sec st2 rateout response st2 pin from logic 0 to logic 1 1 3 00 /sec st1 to st2 mismatch 5 2 % logic 1 input voltage 3.3 v logic 0 input voltage 1.7 v input impedance to common 40 50 100 k? temperature sensor 1 v out at 25c load = 10 m? 2.3 2.4 2.5 v scale factor 6 t a = 25c, v ratio = 5 v 9 mv/c load to v s 25 k? load to common 25 k? turn - on time 7 power on to 90% of final output, cp5 = 2.2 nf 3 ms output drive capability current drive for rated specifications 200 a capacitive load drive 1000 pf power supply operating voltage (v s ) 4.75 5.00 5.25 v quiescent supply current 3.5 ma temperature range specified performance ? 40 +105 c 1 parameter is linearly ratiometric with v ratio . 2 measurement range is the ma ximum range possible, including output swing range, initial offset, sensitivity, offset drift, and sensitivity drift at 5 v s upplies. 3 from +25c to ?40c or +25c to +105c. 4 adjusted by external capacitor, c out . reducing bandwidth below 0.01 hz does n ot result in further noise improvement. 5 self - test mismatch is described as (st2 + st1)/((st2 ? st1)/2). 6 scale factor for a change in temperature from 25c to 26c. v temp is ratiometric to v ratio . see the temperature output and calibration section for more information. 7 based on characterization.
adxrs649 data sheet rev. b | page 4 of 12 absolute maximum ratings table 2. parameter rating acceleration (any axis, 0.5 ms) unpowered 10,000 g powered 10,000 g v dd , av cc ?0.3 v to +6.0 v v ratio av cc st1, st2 av cc output short-circuit duration (any pin to common) indefinite operating temperature range ?55c to +125c storage temperature range ?65c to +150c stresses above those listed under the absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. drops onto hard surfaces can cause shocks of greater than 10,000 g and can exceed the absolute maximum rating of the device. care should be exercised in handling to avoid damage. rate sensitive axis the adxrs649 is a z-axis rate-sensing device (also called a yaw rate-sensing device). it produces a positive going output voltage for clockwise rotation about the axis normal to the package top, that is, clockwise when looking down at the package lid. r a te axis longitudinal axis lateral axis + abcd g 1 7 ef a1 rateout rate in 4.75v 0.25v a v cc =5v v ratio /2 gnd 09573-002 figure 2. rateout signal incr eases with clockwise rotation esd caution
data sheet adxrs649 rev. b | page 5 of 12 pin configuration an d functi on descriptions pgnd st1 st2 temp agnd v ratio nc notes 1. nc = no connect. do not connect to this pin. sumj rateout av cc cp2 cp1 cp4 cp3 cp5 v dd g f e d c b a 7 6 5 4 3 2 1 09573-003 figure 3 . pin configuration table 3 . pin function descriptions pin no. mnemonic description d 6 , d 7 cp5 high voltage filter capacitor, 2.2 n f. a 6 , b 7 cp4 charge pump capacitor, 22 nf. c 6 , c 7 cp3 charge pump capacitor, 22 nf. a 5 , b 5 cp1 charge pump capacitor, 22 nf. a4, b 4 cp2 charge pump capacitor, 22 nf. a 3 , b 3 av cc positive analog supply. b1, a 2 rateout rate signal output. c 1 , c 2 sumj output amp lifier summing junction. d1, d 2 nc d o not connect to these pins. e 1 , e 2 v ratio reference supply for ratiometric output. f1, g 2 agnd analog supply return. f 3 , g 3 temp temperature voltage output. f4, g 4 st2 self - test for sensor 2. f 5 , g 5 st1 self - test for sensor 1. g6, f 7 pgnd charge pum p supply return. e 6, e 7 v dd positive charge pump supply.
adxrs649 dat a sheet rev. b | page 6 of 12 typical performance characteristics n > 1000 for all histograms , unless otherwise noted . 0.1 1 10 ?18 ?15 ?12 ?9 ?6 ?3 0 ?180 ?150 ?120 ?90 ?60 ?30 0 r a te response (db) phase (degrees) frequenc y (khz) 09573-004 figure 4. typical rate and phase res ponse vs. frequency (c out = 470 pf with a series rc low - pass filter of 3.3 k ? and 22 nf) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 time (ms) ra te out (v) 09573-005 figure 5. typical start - up behavior at rateout 100 1000 10000 0.01 0.1 1 10 100 1000 time (seconds) degrees per hour () 09573-006 figure 6. typical root allan deviation at 25c vs. averaging time 0 10 20 30 40 50 60 2.401 2.418 2.434 2.451 2.467 2.484 2.500 2.517 2.533 2.550 2.566 2.583 2.599 nul l bias (v) popul a tion (%) 09573-007 figure 7. null bias at 25c 0 10 20 30 40 50 60 0.081 0.085 0.089 0.093 0.097 0.101 0.105 0.109 0. 1 13 0. 1 17 sensitivit y (mv//sec) popul a tion (%) 09573-008 figure 8. sensitivity at 25c 0 20 40 60 80 100 ?100 ?300 ?500 ?700 ?900 ? 1 100 ?1300 ?1500 ?1700 ?1900 ?2100 ?2300 degrees per second ( ) popul a tion (%) 09573-009 figure 9 . st 1 output change at 25c (v ratio = 5 v)
data sheet adxrs649 rev. b | page 7 of 12 0 20 40 60 80 100 100 300 500 700 900 1 100 1300 1500 1700 1900 2100 2300 degrees per second ( ) popul a tion (%) 09573-010 figure 10 . st2 output change at 25c (v ratio = 5 v) popul a tion (%) 0 10 20 30 40 70 60 50 7 0 ?5 ?4 ?3 ?2 ?1 0 1 2 3 4 5 mism a tch (%) 09573-0 1 1 figure 11 . self - test mismatch at 25c (v ratio = 5 v) popul a tion (%) 0 5 10 15 20 25 30 3.06 3.15 3.24 3.33 3.42 3.51 3.60 3.69 3.78 3.87 3.96 4.05 4.14 4.23 current consumption (ma) 09573-012 figure 12 . current consumption at 25c (v ratio = 5 v) popul a tion (%) 0 5 10 15 20 25 30 2.35 2.37 2.39 2.41 2.43 2.45 2.47 2.49 2.51 2.53 2.55 v temp output (v) 09573-013 figure 13 . v temp output at 25c (v ratio = 5 v) 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 ?50 ?25 0 25 temper a ture (c) 50 75 100 v temp output (v) 09573-014 figure 14 . v temp output over tempera ture, 256 parts (v ratio = 5 v) 0.0001 0.001 0.01 0.1 1 100 1000 10000 frequenc y (hz) g 2/hz and %/sec acceleration gyro output 09573-015 figure 15 . typical response to 25 g rms random vibration , 50 hz to 5 khz (sensor bandwidth = 1 khz)
adxrs649 dat a sheet rev. b | page 8 of 12 0.001 0.01 0.1 10 1 100 1000 10000 vibr a tion input frequenc y (hz) rateout (/sec peak) 09573-016 figure 16 . typical response to 10 g rms sinusoidal vibration (sens or bandwidth = 1 k hz) ?0.5 ?0.4 ?0.3 ?0.2 ?0.1 0 0.1 0.2 0.3 0.4 0.5 0 5000 10000 15000 20000 angular r a te (degress per second) nonlinearit y (%) 09573-017 figure 17 . typical nonlinearity (four typical devices )
data sheet adxrs649 rev. b | page 9 of 12 theory of operation the adxrs649 operates on the principle of a resonator gyro. figure 18 shows a simplified version of one of four polysilicon sensing structures. each sensing structure contains a dither frame that is electrostatically driven to resonance. this pro - duces the necessary velocity element to produce a coriolis force when experiencing angular rate. the a dxr s649 is designed to sense a z - axis (yaw) angular rate. when the sensing structure is exposed to angular rate, the result - ing coriolis force couples into an outer sense frame, which contains movable fingers that are placed between fixed pickoff fingers. th is forms a capacitive pickoff structure that senses coriolis motion. the resulting signal is fed to a series of gain and demodulation stages that produce the electrical rate signal output. the quad sensor design rejects linear and angular acceleration, inc luding external g - forces and vibration. this is achieved by mechanically coupling the four sensing structures such that external g - forces appear as common - mode signals that can be removed by the fully differential architecture implemented in the adxrs649. the ele ctrostatic resonator requires 13 v to 15 v for operation. because only 5 v are typically available in most applications , a charge pump is included on chip. if an ext ernal 13 v to 15 v supply is available, the two capacitors on cp1 to cp4 can be om itted, and this supply can be connected to cp5 (pin d 6 , pin d 7 ). cp5 should not be grounded when power is applied to the adxrs649 . no damage occurs, but under certain condi - tions, the charge pump may fail to start up after the ground is removed without f irst removing power from the adxrs649 . setting the bandwidth external capacitor c out is used in combination with the on - chip r out resistor to create a low - pass filter to limit the bandwidth of the adxrs649 rate response. the ?3 db frequency set by r out an d c out is f out = 1/(2 r out c out ) f out can be well controlled because r out has been trimmed during manufacturing to be 180 k? 1%. any external resistor applied between the rateout pin (b 1, a 2 ) and the sumj pin (c 1 , c 2 ) results in r out = (180 k? r ext )/(180 k? + r ext ) in general, an additional filter (in either hardware or software) is added to attenuate high frequency noise arising from demodu - lation spikes at the 18 khz resonant frequency of the gyro. an r c output filter consisting of a 3.3 k ? s eries resistor and 22 nf shunt capacitor (2.2 khz pole) is recommended. x y z 09573-018 figure 18 . simplified gyro sensing structure one corner
adxrs649 dat a sheet rev. b | page 10 of 12 temperature output a nd calibration it is common practice to temperature - calibrate gyros to improv e their overall accuracy. the adxrs649 has a temperature propor - tional voltage output that provides input to such a calibra tion method. the temperature sensor structure is shown in figure 19. the temperature output is characterist ically nonlinear, and any load resistance connected to the temp output results in decreasing the temp output and its temperature coefficient. therefore, buffering the output is recommended. the voltage at temp ( f 3, g 3 ) is nominally 2.5 v at 25c, and v rati o = 5 v. the temperature coefficient is ~9 mv/c at 25c. although the temp output is highly repeatable, it has only modest absolute accuracy. v ratio temp r fixed r temp 09573-019 figure 19 . temperature sensor structure modifying the m eas urement r ange the adxrs649 scale factor can be reduced to extend the measurement range to as much as 50,000/s ec by adding a single 120 k ? resistor between the rateout and sumj pins . if an external resistor is added between rateout and sumj , c out must be proportionally increased t o maintain correct bandwidth. null bias adjustment the nominal 2.5 v null bias is for a symmetrical swing range at rateout (b 1 , a 2 ). however, a nonsymmetric output swing may be suitable in some applications. null bias adjustment is possible by injecting a suitable current to sumj (c 1 , c 2 ). note that supply disturbances may reflect some null bias instability. digital supply noise should be avoided, particularly in this case. self - test function the adxrs649 includes a self - test feature that actuates each o f the sensing structures and associated electronics in the same manner, as if subjected to angular rate. the self - test is activated by standard l ogic h igh levels applied to input st1 (f 5, g 5 ), input st2 (f 4, g 4 ), or both. st1 causes the voltage at rateout to change by approximately ?0. 1 5 v, and st2 causes an opposite change of +0. 1 5 v. the self - test response follows the viscosity temperature dependence of the package atmosphere, approximately 0.25%/c. activating st1 and st2 simultaneously does not damage the part . st1 and st2 are f airly closely matched ( 2 %), but actuating both simultaneously may result in a small apparent null bias shift proportional to the degree of self - test mismatch. st1 and st2 are activated by applying a voltage equal to v ratio to the st1 pin and the st2 pin. the voltage applied to st1 and st2 must never be greater than av cc . continuous self - test the on - chip integration of the adxrs649 gives it higher reliability than is obtainable with any other high volume manufacturing method. in addition , it is manufactured under a mature b i mos process that has field - proven reliability. as an additional failure detection measure, a power - on self - test can be performed. how - ever, some applications may warrant continuous self - test while sensing rate. information about continuou s self - test techniques is also available in the an - 768 application note , using the adxrs150/adxrs300 in continuous self - test mode .
data sheet adxrs649 rev. b | page 11 of 12 outline dimensions a b c d e f g 76543 top view detail a ball diameter 0.60 0.55 0.50 0.60 max 0.25 min coplanarity 0.15 21 * a1 corner index area 3.20 max 2.50 min * ball a1 identifier is gold plated and connected to the d/a pad internally via holes. 10-26-2009-b 7.05 6.85 sq 6.70 a1 ball corner bottom view detail a 0.80 bsc 4.80 bsc sq seating plane 3 .80 max figure 20. 32-lead ceramic ball grid array [cbga] (bg-32-3) dimensions shown in millimeters ordering guide model 1 temperature range package description package option ADXRS649BBGZ-RL C40c to +105c 32-lead ceramic ball grid array [cbga] bg-32-3 adxrs649bbgz C40c to +105c 32-lead ceramic ball grid array [cbga] bg-32-3 eval-adxrs649z evaluation board 1 z = rohs compliant part.
adxrs649 data sheet rev. b | page 12 of 12 notes ? 2010 C 2012 analog devices, inc. all rights reserved. trademarks and registered trademarks are the property of their respective owners. d09573 - 0 - 10/12(b)

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