april 2006 rev 1 1/8 STTH2002CRC high efficiency ultrafast diode main product characteristics features and benefits suited for smps low losses low forward and reverse recovery times high surge current capability high junction temperature description dual center tab rectifier suited for switch mode power supplies and high frequency dc to dc converters. packaged in i2pak double track, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection order codes i f(av) 2 x 10 a v rrm 200 v t j (max) 175 c v f (typ) 0.76 v t rr (typ) 20 ns part number marking STTH2002CRC stth2002c STTH2002CRC-tr stth2002c i pak double track STTH2002CRC 2 a1 k a2 www.st.com
characteristics STTH2002CRC 2/8 1 characteristics when the two diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p (diode 1) x r th(j-c) (per diode) + p (diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 0.68 x i f(av) + 0.017 i f 2 (rms) table 1. absolute ratings (limiting values at t j = 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) rms forward current per diode 32 a i f(av) average forward current, = 0.5 per diode t c = 150 c 10 a per device t c = 145 c 20 i fsm surge non repetitive forward current t p = 10 ms sinusoidal 100 a t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature 175 c table 2. thermal parameters symbol parameter value unit r th(j-c) junction to case per diode 2.5 c/w to t a l 1 . 4 r th(c) coupling 0.25 table 3. static electrical characteristics symbol parameter test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 10 a t j = 125 c 10 100 v f (2) forward voltage drop t j = 150 c i f = 10 a 0.76 0.85 t j = 25 c i f = 20 a 1.2 v t j = 150 c 0.90 1.02 1. pulse test: t p = 5 ms, < 2 % 2. pulse test: t p = 380 s, < 2 %
STTH2002CRC characteristics 3/8 table 4. dynamic characteristics symbol parameter test conditions min. typ max. unit t rr reverse recovery time i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 20 25 ns i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 28 35 i rm reverse recovery current i f = 10 a, di f /dt = 200 a/s, v r = 160 v, t j = 125 c 5.8 7.5 a t fr forward recovery time i f = 10 a, di f /dt = 50 a/s v fr = 1.1 x v fmax , t j = 25 c 180 ns v fp forward recovery voltage i f = 10 a, di f /dt = 50 a/s, v fr = 1.1 x v fmax , t j = 25 c 1.6 v figure 1. peak current versus duty cycle figure 2. forward voltage drop versus forward current (typical values) 0 20 40 60 80 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i m (a) t d =tp/t tp i m t =tp/t tp i m p = 5 w p = 5 w p = 3 w p = 3 w p = 10 w p = 10 w 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i fm (a) t j =25c t j =150c v fm (v) figure 3. forward voltage drop versus forward current (maximum values) figure 4. relative variation of thermal impedance, junction to case, versus pulse duration 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i fm (a) t j =25c t j =150c v fm (v) 0.1 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z th(j-c) /r th(j-c) single pulse i2pak tp(s)
characteristics STTH2002CRC 4/8 figure 5. junction capacitance versus reverse applied voltage (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) 10 100 1 10 100 1000 c(pf) f=1mhz v osc =30mv rms t j =25c v r (v) 0 50 100 150 200 10 100 1000 q rr (nc) i f =10a v r =160v t j =125 c t j =25 c di f /dt(a/s) figure 7. reverse recovery time versus di f /dt (typical values) figure 8. peak reverse recovery current versus di f /dt (typical values) figure 9. dynamic parameters versus junction temperature 0 10 20 30 40 50 60 70 80 10 100 1000 t rr (ns) i f =10a v r =160v t j =125c t j =25c di f /dt(a/s) 0 2 4 6 8 10 12 10 100 1000 i rm (a) i f =10a v r =160v t j =125c t j =25c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 q rr ;i rm [t j ]/q rr ;i rm [t j =125c] i rm q rr i f =10a v r =160v t j (c)
STTH2002CRC ordering information scheme 5/8 2 ordering information scheme stth 20 02 xxx ultrafast switching diode average forward current 20 = 20 a 02 = 200 v crc = i pak double track 2 repetitive peak reverse voltage package
package information STTH2002CRC 6/8 3 package information epoxy meets ul94, v0 cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 5. i 2 pak double track dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 10 10.40 0.394 0.409 g 4.88 5.28 0.192 0.208 l 16.70 17.5 0.657 0.689 l2 1.27 1.40 0.050 0.055 l3 13.82 14.42 0.544 0.568 e l2 a cropping direction c2 d a1 c l l3 g b2 b
STTH2002CRC ordering information 7/8 4 ordering information 5 revision history part number marking package weight base qty delivery mode STTH2002CRC stth2002c i 2 pak dt 1.48 g 50 tube STTH2002CRC-tr stth2002c i 2 pak dt 1.48 g 1000 tape and reel date revision description of changes 05-apr-2006 1 first issue
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