1/3 p01xxxa ? march 2000 - ed: 1a sensitive scr symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) ti= 55c 0.8 a i t(av) mean on-state current (180 conduction angle) ti= 55c 0.5 a i tsm non repetitive surge peak on-state current (t j initial = 25c ) tp = 8.3 ms 8 a tp=10ms 7 i 2 t i 2 t value for fusing tp = 10 ms 0.24 a 2 s di/dt critical rate of rise of on-state current i g =10ma di g /dt = 0.1 a/ m s. 30 a/ m s t stg t j storage temperature range operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s (at 2.0mm from case) 260 c absolute maximum ratings to92 n i t(rms) = 0.8a n v drm /v rrm = 200v to 600v features symbol parameter voltage unit bdm v drm v rrm repetitive peak off-state voltage t j = 125 cr gk =1k 200 400 600 v high performance planar technology. these parts are intended for general purpose applications where low gate sensitivity is required. description
p01xxxa p g (av) = 0.1 w p gm =2w(tp=20 m s) i gm =1a(tp=20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 150 c/w rth(j-l) junction to leads for dc 80 c/w thermal resistances symbol test conditions sensitivity unit 09 02 11 18 15 i gt v d =12v (dc) r l =140 w tj= 25c min 4 0.5 15 m a max 1 200 25 5 50 v gt v d =12v (dc) r l =140 w tj= 25c max 0.8 v v gd v d =v drm r l =3.3k w r gk =1k w tj= 125c min 0.1 v v grm i rg =10 m a tj= 25c min 8 v tgd v d =v drm i tm =3xi t(av ) di g /dt = 0.1a/ m si g = 10ma tj= 25c typ 0.5 m s i h i t = 50ma r gk =1k w tj= 25c max 5 7 ma i l i g =1ma r gk =1k w tj= 25c max 6 8 ma v tm i tm = 1.6a tp= 380 m s tj= 25c max 1.95 v i drm i rrm v d =v drm r gk =1k w v r =v rrm tj= 25c max b/d :1-m:10 m a tj= 125c max 100 m a dv/dt v d = 67%v drm r gk =1k w tj= 125c min 50 75 80 75 100 v/ m s tq i tm =3xi t(av )v r =35v di/dt=10a/ m s tp=100 m s dv/dt=10v/ m s v d = 67%v drm r gk =1k w tj= 125 c max 200 m s electrical characteristics 2/3
p01xxxa 3/5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 p(w) 360 o =180 o = 120 o =90 o =60 o =30 o dc i(a) t(av) fig.1 : maximum average power dissipation ver- sus average on-state current. 0 20406080100120140 0 0.2 0.4 0.6 0.8 1 p (w) ttab ( c) o rth(j-a) tamb ( c) o -115 -100 -95 -120 -105 -125 -110 fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and ttab). 0 102030405060708090100110120130 0 0.2 0.4 0.6 0.8 1 i (a) t(av) =180 o dc tamb ( c) o fig.3 : average on-state current versus tab tem- perature. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp(s) standard foot print , e(cu)=35 m fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. igt ih 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o tj( c) o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 1 10 100 1,000 0 1 2 3 4 5 6 7 8 tj initial = 25 c o number of cycles i(a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles.
p01xxxa 4/5 110 0.1 1 10 100 i(a).i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp a 10ms, and corresponding value of i 2 t. 00.511.522.533.544.555.5 0.1 1 10 i(a) tm tj initial 25 c o tj max v(v) tm tj max vto =0.95v rt =0.600 fig.8 : on-state characteristics (maximum val- ues). 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 1.0e+06 0.1 1.0 5.0 ih(rgk) ih(rgk=1k ) tj=25 c o rgk( ) fig.9 : relative variation of holding current versus gate-cathode resistance (typical values). p 01 02 a a 1 a a 3 5 x l x scr planar current sensitivity voltage package a = to92 bulk or tape & reel ordering information
p01xxxa 5/5 package mechanical data to92 d f a e b a c ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.35 0.053 b 4.70 0.185 c 2.54 0.100 d 4.40 0.173 e 12.70 0.500 f 3.70 0.146 a 0.45 0.017 type marking package weight delivery mode base qty p0109ba p0109ba to92 0.2g bulk tape & reel 2500 2000 p0109da p0109da p0109ma p0109ma p0102ba p0102ba p0102da p0102da p0102ma p0102ma p0111ba p0111ba p0111da p0111da p0111ma p0111ma p0115ba p0115ba p0115da p0115da p0115ma p0115ma p0118ba p0118ba p0118da p0118da p0118ma p0118ma marking information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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