a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv ceo i c = 100 ma 30 v bv ces i c = 100 ma 60 v bv ebo i e = 10 ma 4.0 v c ob v cb = 28 v f = 1.0 mhz 52 pf h fe v ce = 5.0 v i c = 1.0 a 10 --- p g c v ce = 28 v p out = 50 w f = 500 mhz 7.5 8.5 55 db % npn silicon rf power transistor mrf390 description: the asi mrf390 is a common emitter device designed for class a , ab and c amplifier applications in the 100 - 500 mhz military communications band. features include: ? gold metalization ? emitter ballasting ? input matching maximum ratings i c 7.0 a v cb 60 v p diss 140 w @ t c = 25 o c t j -55 o c to +200 o c t stg -55 o c to +200 o c jc 1.25 o c/w package style .400 8l flg minimum inches / mm .115 / 2.92 .065 / 1.65 .380 / 9.65 b c d e f g a maximum .125 / 3.18 .390 / 9.91 .075 / 1.91 inches / mm h .645 / 16.38 .655 / 16.64 dim k l i j .895 / 22.73 .420 / 10.67 .120 / 3.05 .905 / 22.99 .430 / 10.92 .130 / 3.30 o n m .395 / 10.03 .159 / 4.04 .405 / 10.29 .175 / 4.45 .003 / 0.08 .007 / 0.18 .280 / 7.11 .130 / 3.30 d k e .125 f g .1925 j i h n l m 4 x .060 r full r a b c o .360 / 9.14 .030 / 0.76 .735 / 18.67 .765 / 19.43 1 1 2 2 2 2 33 1 = collector 2 = emitter 3 = base
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