MMSTA92 transistor (pnp) features power dissipation p cm: 0.2 w (tamb=25 ) collector current i cm: -0.3 a collector-base voltage v (br)cbo : -310 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -100 a, i e =0 -310 v collector-emitter breakdown voltage v(br) ceo ic= -1 ma, i b =0 -305 v emitter-base breakdown voltage v(br) ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -200v, i e =0 -0.25 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce = -10v, ic=- 1 ma 60 h fe(2) v ce = -10v, i c = -10 ma 100 200 dc current gain h fe(3) v ce = -10 v, i c = -80 ma 60 collector-emitter saturation voltage v ce (sat) i c = -20 ma, ib= -2 ma -0.2 v base-emitter saturation voltage v be (sat) i c = -20 ma, ib= -2 ma -0.9 v transition frequency f t v ce = -20 v, ic= -10 ma f = 30mhz 50 mhz device marking MMSTA92=k3r unit: mm sot-323 1. base 2. emitter 3. collector MMSTA92 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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