ZVN3310F document number ds31980 rev. 4 - 2 1 of 5 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated ZVN3310F 100v n-channel enhancement mode mosfet product summary v ds (v) 100 r ds ( on ) ( ? ) 10 description and applications this mosfet utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structur e. this mosfet is suitable for general purpose applications. ? general purpose 100v fet ? power management ? disconnect switches ? telecoms ? complementary type ? zvp3310f features and benefits ? high pulse current handling in linear mode ? low input capacitance ? fast switching speed ? lead free by design/rohs compliant (note 1) mechanical data ? case: sot-23 ? case material: ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 2) product marking reel size (inches) tape width (mm) quantity per reel ZVN3310Fta mf 7 8 3000 notes: 1. no purposefully added lead. 2. for packaging details, go to our websit e at http://www.diodes.com/datasheets/ap02007.pdf. marking information mf = product type marking code top view d g s top view pin out confi g uration mf sot-23 e q uivalent circuit source gate drain
ZVN3310F document number ds31980 rev. 4 - 2 2 of 5 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated ZVN3310F maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 100 v gate-source voltage v gss 20 v continuous drain current i d 100 ma pulsed drain current i dm 2 a thermal characteristics characteristic symbol value unit power dissipation @t a = 25c p d 330 mw operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 100 ? ? v i d = 1ma, v gs = 0v zero gate voltage drain current t j = 25 c t j = 125 c (note 4) i dss ? ? 1 50 a v ds = 100v, v gs = 0v v ds = 80v, v gs = 0v gate-source leakage i gss ? ? 20 na v gs = 20v, v ds = 0v gate threshold voltage v gs ( th ) 0.8 ? 2.4 v v ds = v gs , i d = 1ma on characteristics (note 3) on-state drain current i d ( on ) 500 ? ? ma v ds = 25v, v gs = 10v static drain-source on-resistance r ds ( on ) ? ? 10 ? v gs = 10v, i d = 500ma dynamic characteristics (note 4) forward transconductance (note 3) g fs 100 ? ? ms v ds = 25v, i d = 500ma input capacitance c iss ? ? 40 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? 15 reverse transfer capacitance c rss ? ? 5 turn-on delay time (note 5) t d ( on ) ? 3 5 ns v dd 25v, i d = 500ma turn-on rise time (note 5) t r ? 5 7 turn-off delay time (note 5) t d ( off ) ? 4 6 turn-off fall time (note 5) t f ? 5 7 notes: 3. measured under pulsed conditions. width = 300 s. duty cycle 2% 4. sample test. 5. switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator.
ZVN3310F document number ds31980 rev. 4 - 2 3 of 5 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated ZVN3310F
ZVN3310F document number ds31980 rev. 4 - 2 4 of 5 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated ZVN3310F package outline dimensions e e l e1 d a c e1 l1 a1 b 3leads dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.12 - 0.044 e1 1.90 nom 0.075 nom a1 0.01 0.10 0.0004 0.004 e 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 e1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 l 0.25 0.60 0.0098 0.0236 d 2.80 3.04 0.110 0.120 l1 0.45 0.62 0.018 0.024 e 0.95 nom 0.037 nom - - - - - note: controlling dimensions are in millimeters. approximate dimensions are provided in inches suggested pad layout mm inches 0.8 0 . 0 31 0.9 0.035 0.95 0.037 2.0 0.079
ZVN3310F document number ds31980 rev. 4 - 2 5 of 5 www.diodes.com october 2009 ? diodes incorporated a product line o f diodes incorporated ZVN3310F important notice diodes incorporated makes no warranty of any kind, express or implied, with regarding to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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