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  smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BF821,bf823 features low current (max. 50 ma) high voltage (max. 300 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage BF821 -300 v bf823 -250 v collector-emitter voltage BF821 -300 v bf823 -250 v emitter-base voltage v ebo -5 v collector current i c -50 ma peak collector current i cm -100 ma peak base current i bm -50 ma total power dissipation * p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board. v ceo v cbo h fe classification type BF821 bf823 marking 1w 1y electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb = -200 v -10 na i e =0;v cb = -200 v; t j = 150 -10 a emitter cutoff current i ebo i c =0;v eb =-5v -50 na dc current gain h fe i c =-25ma;v ce =-20v 50 collector-emitter saturation voltage v cesat i c =-30ma;i b = -5 ma -800 mv feedback capacitance c re i c =ic=0;v cb = -30 v; f = 1 mhz 1.6 pf transition frequency f t i c =-10ma;v ce = -10 v; f = 100 mhz 60 mhz collector cutoff current i cbo smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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