october 1992 general purpose amplifier applications rf & microwave transistors .230 2l stud (s016) hermetically sealed . emitter ballasted . vswr capability :1 @ rated conditions . hermetic stripac a package . p out = 10 w min. with 10 db gain @ 1 ghz description the msc81010 is a common base hermetically sealed silicon npn microwave transistor utilizing a fishbone, emitter ballasted geometry with a re- fractory/gold metallization system. this device is capable of withstanding infinite load vswr at any phase angle under rated conditions. the msc81010 is designed for class c amplifier applications in the 0.4 - 1.2 ghz frequency range. pin connection branding 81010 order code msc81010 absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* 29 w i c device current* 1.0 a v cc collector-supply voltage* 35 v t j junction temperature 200 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 6.0 c/w *applies only to rated rf amplifier operation msc81010 1. collector 3. emitter 2. base thermal data 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1.0 ghz p in = 1.0 w v cc = 28 v 10 11 w h cf = 1.0 ghz p in = 1.0 w v cc = 28 v 60 64 % g p f = 1.0 ghz p in = 1.0 w v cc = 28 v 10 10.4 db c ob f = 1 mhz v cb = 28 v 10 pf static symbol test conditions value unit min. typ. max. bv cbo i c = 1ma i e = 0ma 45 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer ic = 10ma r be = 10w 45 v i cbo v cb = 28v 2.5 ma h fe v ce = 5v i c = 500ma 15 120 dynamic typical performance power output vs frequency frequency vs collector efficiency relative power output vs collector voltage msc81010 2/5
typical input impedance typical collector load impedance p in = 1.0 w v cc = 28 v normalized to 50 ohms p out = saturated v cc = 28 v normalized to 50 ohms impedance data z in z cl freq. z in ( w )z cl ( w ) 0.4 ghz 2.3 + j 2.7 26.0 + j 16.0 0.6 ghz 2.5 + j 4.0 17.2 + j 13.0 0.8 ghz 2.8 + j 5.0 11.0 + j 9.5 1.0 ghz 3.0 + j 6.0 7.7 + j 6.3 1.2 ghz 3.3 + j 7.2 5.8 + j 3.5 msc81010 3/5
package mechanical data all dimensions are in inches. frequency 1.0 ghz ref.: dwg. no. c127320 test circuit msc81010 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a msc81010 5/5
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